Magnetic properties of Co doped WSe2 by implantation

  • S. Ahmed
  • , X. Ding
  • , Peter P. Murmu
  • , N. N. Bao
  • , R. Liu
  • , J. Kennedy
  • , J. Ding
  • , J. B. Yi*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

In this research, the potential of transition metal doped 2D WSe2 as a 2D dilute magnetic semiconductor has been explored experimentally. Single crystal WSe2 was doped with Co with various concentrations by a physical implantation method. Raman and X-ray diffraction spectra indicate the effective doping of Co in the substitutional sites. Secondary ion mass spectrometry results demonstrate the Gaussian distribution of Co in WSe2. Magnetic measurements show that both un-doped WSe2 and WSe2 doped with Co exhibit weak ferromagnetism at room temperature. The magnetization is increased with Co doping compared to un-doped WSe2 and it tends to be enhanced with increasing doping concentration.

Original languageEnglish
Pages (from-to)25-31
Number of pages7
JournalJournal of Alloys and Compounds
Volume731
DOIs
StatePublished - 15 Jan 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

Keywords

  • Diluted magnetic semiconductor (DMS)
  • Ferromagnetism
  • Ion implantation
  • Magnetic properties
  • Transition metal dichalcogenides (TMDCs)
  • Two-dimensional materials

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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