Magnetic and transport properties of n-type Fe doped In2O 3 and ZnO films

Y. W. Ma; X. L. Huang; X. Liu; J. B. Yi; K. C. Leong; Lap Chan; T. Li; N. N. Bao; J. Ding

doi:10.1166/nnl.2012.1360

Magnetic and transport properties of n-type Fe doped In₂O ₃ and ZnO films

Y. W. Ma, X. L. Huang, X. Liu, J. B. Yi, K. C. Leong, Lap Chan, T. Li, N. N. Bao, J. Ding^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Transition metals (TM) doped oxides films are promising in dilute magnetic semiconductors applications. However, the hindrance of the further progress is that the mechanism of ferromagnetism is still not clear. Several controversial results have been reported. In this work, we reported that room temperature ferromagnetism can be found in Fe doped In₂O₃ films. Room temperature ferromagnetism can be correlated with the carrier concentrations of Fe doped In₂O₃ films. The most conductive (In _0.90, Fe_0.10)₂O₃ film with carrier concentration of 5.78×10¹⁹ cm^-3 showed the highest saturation magnetization (8.2 emu/cm³). The mechanism can be explained by the carrier mediated ferromagnetism. The intrinsic ferromagnetism of Fe doped In₂O₃ films can be tuned by Fe concentrations and oxygen vacancies. However, Fe doped ZnO films did not possess ferromagnetism at room temperature due to their low carrier concentrations (in the order of 1018 cm³).

Original language	English
Pages (from-to)	641-644
Number of pages	4
Journal	Nanoscience and Nanotechnology Letters
Volume	4
Issue number	6
DOIs	https://doi.org/10.1166/nnl.2012.1360
State	Published - Jun 2012
Externally published	Yes

Keywords

Ferromagnetism
Room temperature
Transition metals (TM) doped oxides

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1166/nnl.2012.1360

Cite this

@article{b94a1665e46847669fdfe79645f72598,

title = "Magnetic and transport properties of n-type Fe doped In2O 3 and ZnO films",

abstract = "Transition metals (TM) doped oxides films are promising in dilute magnetic semiconductors applications. However, the hindrance of the further progress is that the mechanism of ferromagnetism is still not clear. Several controversial results have been reported. In this work, we reported that room temperature ferromagnetism can be found in Fe doped In2O3 films. Room temperature ferromagnetism can be correlated with the carrier concentrations of Fe doped In2O3 films. The most conductive (In 0.90, Fe0.10)2O3 film with carrier concentration of 5.78×1019 cm-3 showed the highest saturation magnetization (8.2 emu/cm3). The mechanism can be explained by the carrier mediated ferromagnetism. The intrinsic ferromagnetism of Fe doped In2O3 films can be tuned by Fe concentrations and oxygen vacancies. However, Fe doped ZnO films did not possess ferromagnetism at room temperature due to their low carrier concentrations (in the order of 1018 cm3).",

keywords = "Ferromagnetism, Room temperature, Transition metals (TM) doped oxides",

author = "Ma, \{Y. W.\} and Huang, \{X. L.\} and X. Liu and Yi, \{J. B.\} and Leong, \{K. C.\} and Lap Chan and T. Li and Bao, \{N. N.\} and J. Ding",

year = "2012",

month = jun,

doi = "10.1166/nnl.2012.1360",

language = "English",

volume = "4",

pages = "641--644",

journal = "Nanoscience and Nanotechnology Letters",

issn = "1941-4900",

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TY - JOUR

T1 - Magnetic and transport properties of n-type Fe doped In2O 3 and ZnO films

AU - Ma, Y. W.

AU - Huang, X. L.

AU - Liu, X.

AU - Yi, J. B.

AU - Leong, K. C.

AU - Chan, Lap

AU - Li, T.

AU - Bao, N. N.

AU - Ding, J.

PY - 2012/6

Y1 - 2012/6

N2 - Transition metals (TM) doped oxides films are promising in dilute magnetic semiconductors applications. However, the hindrance of the further progress is that the mechanism of ferromagnetism is still not clear. Several controversial results have been reported. In this work, we reported that room temperature ferromagnetism can be found in Fe doped In2O3 films. Room temperature ferromagnetism can be correlated with the carrier concentrations of Fe doped In2O3 films. The most conductive (In 0.90, Fe0.10)2O3 film with carrier concentration of 5.78×1019 cm-3 showed the highest saturation magnetization (8.2 emu/cm3). The mechanism can be explained by the carrier mediated ferromagnetism. The intrinsic ferromagnetism of Fe doped In2O3 films can be tuned by Fe concentrations and oxygen vacancies. However, Fe doped ZnO films did not possess ferromagnetism at room temperature due to their low carrier concentrations (in the order of 1018 cm3).

AB - Transition metals (TM) doped oxides films are promising in dilute magnetic semiconductors applications. However, the hindrance of the further progress is that the mechanism of ferromagnetism is still not clear. Several controversial results have been reported. In this work, we reported that room temperature ferromagnetism can be found in Fe doped In2O3 films. Room temperature ferromagnetism can be correlated with the carrier concentrations of Fe doped In2O3 films. The most conductive (In 0.90, Fe0.10)2O3 film with carrier concentration of 5.78×1019 cm-3 showed the highest saturation magnetization (8.2 emu/cm3). The mechanism can be explained by the carrier mediated ferromagnetism. The intrinsic ferromagnetism of Fe doped In2O3 films can be tuned by Fe concentrations and oxygen vacancies. However, Fe doped ZnO films did not possess ferromagnetism at room temperature due to their low carrier concentrations (in the order of 1018 cm3).

KW - Ferromagnetism

KW - Room temperature

KW - Transition metals (TM) doped oxides

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DO - 10.1166/nnl.2012.1360

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