Low-Profile Wideband D-Band Absorber Utilizing Resistive Thin-Film Screen-Printing

Youngno Youn; Ahmed Abdelmottaleb Omar; Daehyeon Kim; Suho Chang; Wonbin Hong

doi:10.1109/TCPMT.2023.3271962

Low-Profile Wideband D-Band Absorber Utilizing Resistive Thin-Film Screen-Printing

Youngno Youn, Ahmed Abdelmottaleb Omar, Daehyeon Kim, Suho Chang, Wonbin Hong^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A low-profile and wideband sub-THz absorber utilizing a thin resistive ruthenium oxide (RuO2) printing technique is proposed in this letter. The proposed absorber exhibits an absorption bandwidth from 108.2 to 171.1 GHz, which represents 45.04% with a profile of 0.076 λmax which is the free-space wavelength at the lowest frequency. The detailed manufacturing steps are presented along with step-by-step photographs of the fabricated sample. The fabricated prototype is validated by the free space measurement setup with good coherence to the simulated results. This invention is expected to provide a practical and concise solution for mitigating electromagnetic interference (EMI) in future sixth-generation (6G) devices.

Original language	English
Pages (from-to)	580-582
Number of pages	3
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	13
Issue number	4
DOIs	https://doi.org/10.1109/TCPMT.2023.3271962
State	Published - 1 Apr 2023

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

Keywords

Absorber
low temperature co-fired ceramic (LTCC) fabrication
low-profile
sub-THz
wideband

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Access to Document

10.1109/TCPMT.2023.3271962

Cite this

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abstract = "A low-profile and wideband sub-THz absorber utilizing a thin resistive ruthenium oxide (RuO2) printing technique is proposed in this letter. The proposed absorber exhibits an absorption bandwidth from 108.2 to 171.1 GHz, which represents 45.04% with a profile of 0.076 λmax which is the free-space wavelength at the lowest frequency. The detailed manufacturing steps are presented along with step-by-step photographs of the fabricated sample. The fabricated prototype is validated by the free space measurement setup with good coherence to the simulated results. This invention is expected to provide a practical and concise solution for mitigating electromagnetic interference (EMI) in future sixth-generation (6G) devices.",

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author = "Youngno Youn and Omar, {Ahmed Abdelmottaleb} and Daehyeon Kim and Suho Chang and Wonbin Hong",

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AU - Chang, Suho

AU - Hong, Wonbin

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Low-Profile Wideband D-Band Absorber Utilizing Resistive Thin-Film Screen-Printing

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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