Abstract
High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.
| Original language | English |
|---|---|
| Pages (from-to) | 794-800 |
| Number of pages | 7 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 8 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2014 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2014 WILEY-VCH Verlag GmbH & Co.
Keywords
- CMOS
- Flexible electronics
- Germanium
- Thin films
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics