Low-cost high-quality crystalline germanium based flexible devices

Joanna M. Nassar; Aftab M. Hussain; Jhonathan P. Rojas; Muhammad M. Hussain

doi:10.1002/pssr.201409257

Low-cost high-quality crystalline germanium based flexible devices

Joanna M. Nassar, Aftab M. Hussain, Jhonathan P. Rojas, Muhammad M. Hussain^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

Original language	English
Pages (from-to)	794-800
Number of pages	7
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	9
DOIs	https://doi.org/10.1002/pssr.201409257
State	Published - 2014
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co.

Keywords

CMOS
Flexible electronics
Germanium
Thin films

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

Access to Document

10.1002/pssr.201409257

Cite this

@article{5a32ffa22f474978862e30574911f23c,

title = "Low-cost high-quality crystalline germanium based flexible devices",

abstract = "High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.",

keywords = "CMOS, Flexible electronics, Germanium, Thin films",

author = "Nassar, {Joanna M.} and Hussain, {Aftab M.} and Rojas, {Jhonathan P.} and Hussain, {Muhammad M.}",

note = "Publisher Copyright: {\textcopyright} 2014 WILEY-VCH Verlag GmbH & Co.",

year = "2014",

doi = "10.1002/pssr.201409257",

language = "English",

volume = "8",

pages = "794--800",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "9",

}

TY - JOUR

T1 - Low-cost high-quality crystalline germanium based flexible devices

AU - Nassar, Joanna M.

AU - Hussain, Aftab M.

AU - Rojas, Jhonathan P.

AU - Hussain, Muhammad M.

PY - 2014

Y1 - 2014

N2 - High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

AB - High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

KW - CMOS

KW - Flexible electronics

KW - Germanium

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84908246255&partnerID=8YFLogxK

U2 - 10.1002/pssr.201409257

DO - 10.1002/pssr.201409257

M3 - Article

AN - SCOPUS:84908246255

SN - 1862-6254

VL - 8

SP - 794

EP - 800

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 9

ER -

Low-cost high-quality crystalline germanium based flexible devices

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this