Low-cost high-quality crystalline germanium based flexible devices

Joanna M. Nassar, Aftab M. Hussain, Jhonathan P. Rojas, Muhammad M. Hussain*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

Original languageEnglish
Pages (from-to)794-800
Number of pages7
JournalPhysica Status Solidi - Rapid Research Letters
Volume8
Issue number9
DOIs
StatePublished - 2014
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co.

Keywords

  • CMOS
  • Flexible electronics
  • Germanium
  • Thin films

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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