Linearized CMOS high effeciency classe rf power amplifier

Saad M. Al-Shaharani

Linearized CMOS high effeciency classe rf power amplifier

Saad M. Al-Shaharani^*

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents a CMOS class-E power amplifier that has a simple structure and exhibits high linearity. The amplifier operates at 900 MHz from a 2.5-V, and delivers 1-W output power with 80% drain efficiency. Simulation results show that 3 ^rd and 5 ^th IMD products of the proposed PA are lower than that of the conventional class-E amplifier by 14 dB and 9dB respectively. The proposed amplifier shows a good performance when tested with linear modulation scheme such as that used in North American Digital Cellular (NADC).

Original language	English
Pages (from-to)	285-289
Number of pages	5
Journal	WSEAS Transactions on Circuits and Systems
Volume	5
Issue number	2
State	Published - Feb 2006

Keywords

CMOS
Class-E
Power Amplifier
RF

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Linearized CMOS high effeciency classe rf power amplifier",

abstract = "This paper presents a CMOS class-E power amplifier that has a simple structure and exhibits high linearity. The amplifier operates at 900 MHz from a 2.5-V, and delivers 1-W output power with 80\% drain efficiency. Simulation results show that 3 rd and 5 th IMD products of the proposed PA are lower than that of the conventional class-E amplifier by 14 dB and 9dB respectively. The proposed amplifier shows a good performance when tested with linear modulation scheme such as that used in North American Digital Cellular (NADC).",

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N2 - This paper presents a CMOS class-E power amplifier that has a simple structure and exhibits high linearity. The amplifier operates at 900 MHz from a 2.5-V, and delivers 1-W output power with 80% drain efficiency. Simulation results show that 3 rd and 5 th IMD products of the proposed PA are lower than that of the conventional class-E amplifier by 14 dB and 9dB respectively. The proposed amplifier shows a good performance when tested with linear modulation scheme such as that used in North American Digital Cellular (NADC).

AB - This paper presents a CMOS class-E power amplifier that has a simple structure and exhibits high linearity. The amplifier operates at 900 MHz from a 2.5-V, and delivers 1-W output power with 80% drain efficiency. Simulation results show that 3 rd and 5 th IMD products of the proposed PA are lower than that of the conventional class-E amplifier by 14 dB and 9dB respectively. The proposed amplifier shows a good performance when tested with linear modulation scheme such as that used in North American Digital Cellular (NADC).

KW - CMOS

KW - Class-E

KW - Power Amplifier

KW - RF

UR - https://www.scopus.com/pages/publications/34248397177

M3 - Article

AN - SCOPUS:34248397177

SN - 1109-2734

VL - 5

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JO - WSEAS Transactions on Circuits and Systems

JF - WSEAS Transactions on Circuits and Systems

IS - 2

ER -

Linearized CMOS high effeciency classe rf power amplifier

Abstract

Keywords

ASJC Scopus subject areas

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