Laser pulse detector based on Sn-doped indium oxide films

M. A. Goridal; S. M.A. Durrani; E. E. Khawaja

doi:10.1051/epjap:1999227

Laser pulse detector based on Sn-doped indium oxide films

M. A. Goridal
, S. M.A. Durrani
, E. E. Khawaja

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Sn-doped indium oxide (ITO) films have been investigated for fast rise time laser pulse detection for the first time. The detector was tested for different wavelengths in the UV (280 nm, resulting in inter-band transitions of electrons) and NIR (1.06 μm, resulting in free carrier absorption) region. Characteristics of laser induced voltages for the ITO films with different compositions have been studied for both excitation wavelengths. The voltage pulse generated by NIR-excitation was delayed in time at least by 100 ns as compared with that generated by UV-excitation. Responsivity of the films is larger for the UV-excitation than for the NIR-excitation.

Original language	English
Pages (from-to)	37-42
Number of pages	6
Journal	EPJ Applied Physics
Volume	8
Issue number	1
DOIs	https://doi.org/10.1051/epjap:1999227
State	Published - Oct 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics

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title = "Laser pulse detector based on Sn-doped indium oxide films",

abstract = "Sn-doped indium oxide (ITO) films have been investigated for fast rise time laser pulse detection for the first time. The detector was tested for different wavelengths in the UV (280 nm, resulting in inter-band transitions of electrons) and NIR (1.06 μm, resulting in free carrier absorption) region. Characteristics of laser induced voltages for the ITO films with different compositions have been studied for both excitation wavelengths. The voltage pulse generated by NIR-excitation was delayed in time at least by 100 ns as compared with that generated by UV-excitation. Responsivity of the films is larger for the UV-excitation than for the NIR-excitation.",

author = "Goridal, \{M. A.\} and Durrani, \{S. M.A.\} and Khawaja, \{E. E.\}",

year = "1999",

month = oct,

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T1 - Laser pulse detector based on Sn-doped indium oxide films

AU - Goridal, M. A.

AU - Durrani, S. M.A.

AU - Khawaja, E. E.

PY - 1999/10

Y1 - 1999/10

N2 - Sn-doped indium oxide (ITO) films have been investigated for fast rise time laser pulse detection for the first time. The detector was tested for different wavelengths in the UV (280 nm, resulting in inter-band transitions of electrons) and NIR (1.06 μm, resulting in free carrier absorption) region. Characteristics of laser induced voltages for the ITO films with different compositions have been studied for both excitation wavelengths. The voltage pulse generated by NIR-excitation was delayed in time at least by 100 ns as compared with that generated by UV-excitation. Responsivity of the films is larger for the UV-excitation than for the NIR-excitation.

AB - Sn-doped indium oxide (ITO) films have been investigated for fast rise time laser pulse detection for the first time. The detector was tested for different wavelengths in the UV (280 nm, resulting in inter-band transitions of electrons) and NIR (1.06 μm, resulting in free carrier absorption) region. Characteristics of laser induced voltages for the ITO films with different compositions have been studied for both excitation wavelengths. The voltage pulse generated by NIR-excitation was delayed in time at least by 100 ns as compared with that generated by UV-excitation. Responsivity of the films is larger for the UV-excitation than for the NIR-excitation.

UR - https://www.scopus.com/pages/publications/0342592474

U2 - 10.1051/epjap:1999227

DO - 10.1051/epjap:1999227

M3 - Article

AN - SCOPUS:0342592474

SN - 1286-0042

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SP - 37

EP - 42

JO - EPJ Applied Physics

JF - EPJ Applied Physics

IS - 1

ER -

Laser pulse detector based on Sn-doped indium oxide films

Abstract

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