L-Band Quantum-dash Self-Injection Locked Multiwavelength Laser Source for Future WDM Access Networks

Mohamed Adel Shemis; Amr Mohamed Ragheb; Muhammad Talal Ali Khan; Habib Ali Fathallah; Saleh Alshebeili; Khurram Karim Qureshi; Mohammed Zahed Mustafa Khan

doi:10.1109/JPHOT.2017.2733162

L-Band Quantum-dash Self-Injection Locked Multiwavelength Laser Source for Future WDM Access Networks

Mohamed Adel Shemis, Amr Mohamed Ragheb, Muhammad Talal Ali Khan, Habib Ali Fathallah, Saleh Alshebeili, Khurram Karim Qureshi, Mohammed Zahed Mustafa Khan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We propose and demonstrate a compact, cost-effective, multiwavelength laser source employing self-injection locking scheme on InAs/InP quantum-dash (Qdash) laser diode. The device is shown to exhibit Fabry-Perot modes or subcarriers selectivity of 1 to 16 between ∼1600-1610 nm, with corresponding mode power (side mode suppression ratio) variation of ∼10 (∼38) to ∼-2.5 (∼22) dBm (dB), and able to extend beyond 1610 nm, thereby encompassing >30 optical carriers. Then, we utilized a single self-locked optical carrier at 1609.6 nm to successfully transmit 128 Gb/s dual-polarization quadrature phase shift keying signal over 20 km single mode fiber with ∼-16 dBm receiver sensitivity. To stem the viability of unifying the transceivers and addressing the requirements of next generation access networks, we propose self-seeded Qdash laser based wavelength division multiplexed passive optical network, capable of reaching a data capacity of 2.0 Tb/s (16 × 128, Gb_s) in L-band.

Original language	English
Article number	7905807
Journal	IEEE Photonics Journal
Volume	9
Issue number	5
DOIs	https://doi.org/10.1109/JPHOT.2017.2733162
State	Published - Oct 2017

Bibliographical note

Publisher Copyright:
© 2009-2012 IEEE.

Keywords

InAs/InP quantum-dash lasers
multi-wavelength laser source
passive optical networks.
self-injection locking

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JPHOT.2017.2733162

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title = "L-Band Quantum-dash Self-Injection Locked Multiwavelength Laser Source for Future WDM Access Networks",

abstract = "We propose and demonstrate a compact, cost-effective, multiwavelength laser source employing self-injection locking scheme on InAs/InP quantum-dash (Qdash) laser diode. The device is shown to exhibit Fabry-Perot modes or subcarriers selectivity of 1 to 16 between ∼1600-1610 nm, with corresponding mode power (side mode suppression ratio) variation of ∼10 (∼38) to ∼-2.5 (∼22) dBm (dB), and able to extend beyond 1610 nm, thereby encompassing >30 optical carriers. Then, we utilized a single self-locked optical carrier at 1609.6 nm to successfully transmit 128 Gb/s dual-polarization quadrature phase shift keying signal over 20 km single mode fiber with ∼-16 dBm receiver sensitivity. To stem the viability of unifying the transceivers and addressing the requirements of next generation access networks, we propose self-seeded Qdash laser based wavelength division multiplexed passive optical network, capable of reaching a data capacity of 2.0 Tb/s (16 × 128, Gbs) in L-band.",

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author = "Shemis, {Mohamed Adel} and Ragheb, {Amr Mohamed} and Khan, {Muhammad Talal Ali} and Fathallah, {Habib Ali} and Saleh Alshebeili and Qureshi, {Khurram Karim} and Khan, {Mohammed Zahed Mustafa}",

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year = "2017",

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AU - Shemis, Mohamed Adel

AU - Ragheb, Amr Mohamed

AU - Khan, Muhammad Talal Ali

AU - Fathallah, Habib Ali

AU - Alshebeili, Saleh

AU - Qureshi, Khurram Karim

AU - Khan, Mohammed Zahed Mustafa

PY - 2017/10

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N2 - We propose and demonstrate a compact, cost-effective, multiwavelength laser source employing self-injection locking scheme on InAs/InP quantum-dash (Qdash) laser diode. The device is shown to exhibit Fabry-Perot modes or subcarriers selectivity of 1 to 16 between ∼1600-1610 nm, with corresponding mode power (side mode suppression ratio) variation of ∼10 (∼38) to ∼-2.5 (∼22) dBm (dB), and able to extend beyond 1610 nm, thereby encompassing >30 optical carriers. Then, we utilized a single self-locked optical carrier at 1609.6 nm to successfully transmit 128 Gb/s dual-polarization quadrature phase shift keying signal over 20 km single mode fiber with ∼-16 dBm receiver sensitivity. To stem the viability of unifying the transceivers and addressing the requirements of next generation access networks, we propose self-seeded Qdash laser based wavelength division multiplexed passive optical network, capable of reaching a data capacity of 2.0 Tb/s (16 × 128, Gbs) in L-band.

AB - We propose and demonstrate a compact, cost-effective, multiwavelength laser source employing self-injection locking scheme on InAs/InP quantum-dash (Qdash) laser diode. The device is shown to exhibit Fabry-Perot modes or subcarriers selectivity of 1 to 16 between ∼1600-1610 nm, with corresponding mode power (side mode suppression ratio) variation of ∼10 (∼38) to ∼-2.5 (∼22) dBm (dB), and able to extend beyond 1610 nm, thereby encompassing >30 optical carriers. Then, we utilized a single self-locked optical carrier at 1609.6 nm to successfully transmit 128 Gb/s dual-polarization quadrature phase shift keying signal over 20 km single mode fiber with ∼-16 dBm receiver sensitivity. To stem the viability of unifying the transceivers and addressing the requirements of next generation access networks, we propose self-seeded Qdash laser based wavelength division multiplexed passive optical network, capable of reaching a data capacity of 2.0 Tb/s (16 × 128, Gbs) in L-band.

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L-Band Quantum-dash Self-Injection Locked Multiwavelength Laser Source for Future WDM Access Networks

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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