KRXPS study of the oxidation of Ge(001) surface

Nouar A. Tabet; Mushtaq A. Salim

doi:10.1016/S0169-4332(98)00251-7

KRXPS study of the oxidation of Ge(001) surface

Nouar A. Tabet^*
, Mushtaq A. Salim

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The oxidation of the chemically etched Ge(001) surface has been investigated by means of kinetic resolved X-ray photoelectron spectroscopy (KRXPS). In situ oxidation treatments have been carried out at T = 250°C, under 0.5 atm of pure oxygen atmosphere and for different durations. We propose a two step oxidation model. First, the bare portions of the surface are oxidized. Then, follows a lateral growth of the germanium oxide islands. The process is assisted by the decomposition of the overlayer that stems from the chemical etching and the air contamination. The model gives a consistent interpretation of the KRXPS measurements.

Original language	English
Pages (from-to)	275-282
Number of pages	8
Journal	Applied Surface Science
Volume	134
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(98)00251-7
State	Published - Sep 1998

Keywords

Ge oxidation
Semiconductor surface
XPS

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(98)00251-7

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@article{8bdf9b6ad08248d882dad796be4859f8,

title = "KRXPS study of the oxidation of Ge(001) surface",

abstract = "The oxidation of the chemically etched Ge(001) surface has been investigated by means of kinetic resolved X-ray photoelectron spectroscopy (KRXPS). In situ oxidation treatments have been carried out at T = 250°C, under 0.5 atm of pure oxygen atmosphere and for different durations. We propose a two step oxidation model. First, the bare portions of the surface are oxidized. Then, follows a lateral growth of the germanium oxide islands. The process is assisted by the decomposition of the overlayer that stems from the chemical etching and the air contamination. The model gives a consistent interpretation of the KRXPS measurements.",

keywords = "Ge oxidation, Semiconductor surface, XPS",

author = "Tabet, \{Nouar A.\} and Salim, \{Mushtaq A.\}",

year = "1998",

month = sep,

doi = "10.1016/S0169-4332(98)00251-7",

language = "English",

volume = "134",

pages = "275--282",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - KRXPS study of the oxidation of Ge(001) surface

AU - Tabet, Nouar A.

AU - Salim, Mushtaq A.

PY - 1998/9

Y1 - 1998/9

N2 - The oxidation of the chemically etched Ge(001) surface has been investigated by means of kinetic resolved X-ray photoelectron spectroscopy (KRXPS). In situ oxidation treatments have been carried out at T = 250°C, under 0.5 atm of pure oxygen atmosphere and for different durations. We propose a two step oxidation model. First, the bare portions of the surface are oxidized. Then, follows a lateral growth of the germanium oxide islands. The process is assisted by the decomposition of the overlayer that stems from the chemical etching and the air contamination. The model gives a consistent interpretation of the KRXPS measurements.

AB - The oxidation of the chemically etched Ge(001) surface has been investigated by means of kinetic resolved X-ray photoelectron spectroscopy (KRXPS). In situ oxidation treatments have been carried out at T = 250°C, under 0.5 atm of pure oxygen atmosphere and for different durations. We propose a two step oxidation model. First, the bare portions of the surface are oxidized. Then, follows a lateral growth of the germanium oxide islands. The process is assisted by the decomposition of the overlayer that stems from the chemical etching and the air contamination. The model gives a consistent interpretation of the KRXPS measurements.

KW - Ge oxidation

KW - Semiconductor surface

KW - XPS

UR - https://www.scopus.com/pages/publications/0032167268

U2 - 10.1016/S0169-4332(98)00251-7

DO - 10.1016/S0169-4332(98)00251-7

M3 - Article

AN - SCOPUS:0032167268

SN - 0169-4332

VL - 134

SP - 275

EP - 282

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

KRXPS study of the oxidation of Ge(001) surface

Abstract

Keywords

ASJC Scopus subject areas

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