Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

Ridwanullahi Isa, Jawad Mirza, Salman Ghafoor, Mohammed Zahed Mustafa Khan, Khurram Karim Qureshi*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

1 Scopus citations


Recent advancements in power electronic switches provide effective control and operational stability of power grid systems. Junction temperature is a crucial parameter of power-switching semiconductor devices, which needs monitoring to facilitate reliable operation and thermal control of power electronics circuits and ensure reliable performance. Over the years, various junction temperature measurement techniques have been developed, engaging both non-optical and optical-based methods, highlighting their advancements and challenges. This review focuses on several optical sensing-based junction temperature measuring techniques used for power-switching devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). A comprehensive summary of recent developments in infrared camera (IRC), thermal sensitive optical parameter (TSOP), and fiber Bragg grating (FBG) temperature sensing techniques is provided, shedding light on their merits and challenges while providing a few possible future solutions. In addition, calibration methods and remedies for obtaining accurate measurements are discussed, thus providing better insight and directions for future research.

Original languageEnglish
Article number1636
Issue number8
StatePublished - Aug 2023

Bibliographical note

Publisher Copyright:
© 2023 by the authors.


  • FBG
  • IGBT
  • SiC
  • electroluminescence
  • junction temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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