Investigations on performance parameters of graphene interfacial layer modified FASnI3: Zn-based lead-free perovskite solar cells

Firoz Khan*, Fatima Rasheed J., Thamraa Alshahrani, Syed Kashif Ali, Abdulaziz M. Alanazi, Amal H. Alsehli, Marwah M. Alsowayigh, Nazar Elamin Ahmed

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The emerging and extensively approved solar technology be certainly of perovskites, by virtue of their exceptional contributions. However, their massive production senses on the remaining hurdles that are to be crossed before making them commercially diligent. This investigation highlights the measures to be taken to implement a lead free, highly stable perovskite solar cells (PSCs). The use of Zn-doped, Sn-based as perovskite (PVT) absorber layer together with graphene passivation layer at PVT/ hole transport layer (HTL) interface resulted in effective implementation of this phenomenon. In this research, a systematic numerical validation of PSC structure with FTO/ZnOS/FASnI3:Zn/Graphene/Cu2O/Au. The results revealed that graphene interfacial layer with adequate bandgap and electron affinity offer appreciable efficiency through proper band alignment and suppressed carrier recombination. Moreover, the recommended device contributes exceptional performance parameters: (Jsc, Voc, FF, and η) of (20.13 mA/cm2, 1.207 V, 87.13%, and 21.17%) for minimum PVT defect density of 1 × 1013 cm−3.

Original languageEnglish
Article number117209
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume301
DOIs
StatePublished - Mar 2024

Bibliographical note

Publisher Copyright:
© 2024 Elsevier B.V.

Keywords

  • Lead-free perovskite
  • Perovskite solar cells
  • Recombination rate
  • SCAPS-1D
  • Sn-based perovskite

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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