Investigation of Thermoelectric Power of CuInGaTe₂ Single Crystals

Abstract: Thermoelectric power values of CuInGaTe₂ (CIGT) single crystals were estimated without precedent for a wide temperature range. An authorial unique design dependent on Bridgman procedure for crystal growth from the melt has been utilized to prepare our sample. The single crystals show a p-type conductivity within the full range of temperature. Experimental examination has been made of the variety of electrical conductivity and thermoelectric power with CIGT single crystals. The holes and electrons effective masses, the mobilities of the electrons and holes, and the diffusion length of the majority and minority carriers were determined at room temperature. The electron and hole diffusion coefficients in CIGT single crystals are D_n = 7.938 m²/s and D_p = 7.365 m²/s, respectively. Additionally, the holes and electrons relaxation times were derived from the mobilities. These outcomes give us a complete and clear picture for the main physical parameters essential for the industrial applications.