Investigation of the Role of Hole Doping in Different High Temperature Superconducting Systems Using XANES Technique

N. M. Hamdan; M. Faiz; M. A. Salim; A. Hasan; Z. Hussain

doi:10.1063/1.1757980

Investigation of the Role of Hole Doping in Different High Temperature Superconducting Systems Using XANES Technique

N. M. Hamdan^*, M. Faiz, M. A. Salim, A. Hasan, Z. Hussain

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

X-ray Absorption Near edge Structure (XANES) technique was used to study the role of hole doping in F-doped Hg-1223 and the Ce-doped Tl-1223. Oxygen k-edge and Cu L_2,3-edge structures were thoroughly investigated. The pre-edge features of O k-edge spectra, as a function of doping, reveal important information about the projected local density of unoccupied states on the O sites in the region close to the absorption edge, which is a measure of O 2p hole concentration in the valance band. Furthermore, the Cu L_2,3 absorption edge provides useful information about the valance state of Cu which is also related to the hole state in the CuO₂ planes. In this work, we will discuss these XANES results in these systems and correlate the observed improvements in the superconducting properties to the electronic structure in the CuO₂ planes.

Original language	English
Title of host publication	Synchrotron Radiation Instrumentation
Subtitle of host publication	8th International Conference on Synchrotron Radiation Instrumentation
Publisher	American Institute of Physics Inc.
Pages	1059-1061
Number of pages	3
ISBN (Electronic)	0735401799
DOIs	https://doi.org/10.1063/1.1757980
State	Published - 12 May 2004

Publication series

Name	AIP Conference Proceedings
Volume	705
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Bibliographical note

Publisher Copyright:
© 2004 American Institute of Physics.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1757980

Cite this

Hamdan, N. M., Faiz, M., Salim, M. A., Hasan, A., & Hussain, Z. (2004). Investigation of the Role of Hole Doping in Different High Temperature Superconducting Systems Using XANES Technique. In Synchrotron Radiation Instrumentation: 8th International Conference on Synchrotron Radiation Instrumentation (pp. 1059-1061). (AIP Conference Proceedings; Vol. 705). American Institute of Physics Inc.. https://doi.org/10.1063/1.1757980

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abstract = "X-ray Absorption Near edge Structure (XANES) technique was used to study the role of hole doping in F-doped Hg-1223 and the Ce-doped Tl-1223. Oxygen k-edge and Cu L2,3-edge structures were thoroughly investigated. The pre-edge features of O k-edge spectra, as a function of doping, reveal important information about the projected local density of unoccupied states on the O sites in the region close to the absorption edge, which is a measure of O 2p hole concentration in the valance band. Furthermore, the Cu L2,3 absorption edge provides useful information about the valance state of Cu which is also related to the hole state in the CuO2 planes. In this work, we will discuss these XANES results in these systems and correlate the observed improvements in the superconducting properties to the electronic structure in the CuO2 planes.",

author = "Hamdan, \{N. M.\} and M. Faiz and Salim, \{M. A.\} and A. Hasan and Z. Hussain",

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year = "2004",

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doi = "10.1063/1.1757980",

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Hamdan, NM, Faiz, M, Salim, MA, Hasan, A & Hussain, Z 2004, Investigation of the Role of Hole Doping in Different High Temperature Superconducting Systems Using XANES Technique. in Synchrotron Radiation Instrumentation: 8th International Conference on Synchrotron Radiation Instrumentation. AIP Conference Proceedings, vol. 705, American Institute of Physics Inc., pp. 1059-1061. https://doi.org/10.1063/1.1757980

Investigation of the Role of Hole Doping in Different High Temperature Superconducting Systems Using XANES Technique. / Hamdan, N. M.; Faiz, M.; Salim, M. A. et al.
Synchrotron Radiation Instrumentation: 8th International Conference on Synchrotron Radiation Instrumentation. American Institute of Physics Inc., 2004. p. 1059-1061 (AIP Conference Proceedings; Vol. 705).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - X-ray Absorption Near edge Structure (XANES) technique was used to study the role of hole doping in F-doped Hg-1223 and the Ce-doped Tl-1223. Oxygen k-edge and Cu L2,3-edge structures were thoroughly investigated. The pre-edge features of O k-edge spectra, as a function of doping, reveal important information about the projected local density of unoccupied states on the O sites in the region close to the absorption edge, which is a measure of O 2p hole concentration in the valance band. Furthermore, the Cu L2,3 absorption edge provides useful information about the valance state of Cu which is also related to the hole state in the CuO2 planes. In this work, we will discuss these XANES results in these systems and correlate the observed improvements in the superconducting properties to the electronic structure in the CuO2 planes.

AB - X-ray Absorption Near edge Structure (XANES) technique was used to study the role of hole doping in F-doped Hg-1223 and the Ce-doped Tl-1223. Oxygen k-edge and Cu L2,3-edge structures were thoroughly investigated. The pre-edge features of O k-edge spectra, as a function of doping, reveal important information about the projected local density of unoccupied states on the O sites in the region close to the absorption edge, which is a measure of O 2p hole concentration in the valance band. Furthermore, the Cu L2,3 absorption edge provides useful information about the valance state of Cu which is also related to the hole state in the CuO2 planes. In this work, we will discuss these XANES results in these systems and correlate the observed improvements in the superconducting properties to the electronic structure in the CuO2 planes.

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Hamdan NM, Faiz M, Salim MA, Hasan A, Hussain Z. Investigation of the Role of Hole Doping in Different High Temperature Superconducting Systems Using XANES Technique. In Synchrotron Radiation Instrumentation: 8th International Conference on Synchrotron Radiation Instrumentation. American Institute of Physics Inc. 2004. p. 1059-1061. (AIP Conference Proceedings). doi: 10.1063/1.1757980

Investigation of the Role of Hole Doping in Different High Temperature Superconducting Systems Using XANES Technique

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