Intrinsic or Interface Clustering-Induced Ferromagnetism in Fe-Doped In2O3-Diluted Magnetic Semiconductors

Xi Luo; Li Ting Tseng; Yiren Wang; Nina Bao; Zunming Lu; Xiang Ding; Rongkun Zheng; Yonghua Du; Kevin Huang; Lei Shu; Andreas Suter; Wai Tung Lee; Rong Liu; Jun Ding; Kiyonori Suzuki; Thomas Prokscha; Elvezio Morenzoni; Jia Bao Yi

doi:10.1021/acsami.8b04046

Intrinsic or Interface Clustering-Induced Ferromagnetism in Fe-Doped In₂O₃-Diluted Magnetic Semiconductors

Xi Luo, Li Ting Tseng, Yiren Wang, Nina Bao, Zunming Lu, Xiang Ding, Rongkun Zheng, Yonghua Du, Kevin Huang, Lei Shu, Andreas Suter, Wai Tung Lee, Rong Liu, Jun Ding, Kiyonori Suzuki, Thomas Prokscha, Elvezio Morenzoni, Jia Bao Yi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Five percent Fe-doped In₂O₃ films were deposited using a pulsed laser deposition system. X-ray diffraction and transmission electron microscopy analysis show that the films deposited under oxygen partial pressures of 10^-3 and 10^-5 Torr are uniform without clusters or secondary phases. However, the film deposited under 10^-7 Torr has a Fe-rich phase at the interface. Magnetic measurements demonstrate that the magnetization of the films increases with decreasing oxygen partial pressure. Muon spin relaxation (μSR) analysis indicates that the volume fractions of the ferromagnetic phases in PO₂ = 10^-3, 10^-5, and 10^-7 Torr-deposited samples are 23, 49, and 68%, respectively, suggesting that clusters or secondary phases may not be the origin of the ferromagnetism and that the ferromagnetism is not carrier-mediated. We propose that the formation of magnetic bound polarons is the origin of the ferromagnetism. In addition, both μSR and polarized neutron scattering demonstrate that the Fe-rich phase at the interface has a lower magnetization compared to the uniformly distributed phases.

Original language	English
Pages (from-to)	22372-22380
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	26
DOIs	https://doi.org/10.1021/acsami.8b04046
State	Published - 5 Jul 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© Copyright 2018 American Chemical Society.

Keywords

InO
and muon spin relaxation
clustering
diluted magnetic semiconductor
ferromagnetism
intrinsic ferromagnetism

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.8b04046

Cite this

Luo, X., Tseng, L. T., Wang, Y., Bao, N., Lu, Z., Ding, X., Zheng, R., Du, Y., Huang, K., Shu, L., Suter, A., Lee, W. T., Liu, R., Ding, J., Suzuki, K., Prokscha, T., Morenzoni, E., & Yi, J. B. (2018). Intrinsic or Interface Clustering-Induced Ferromagnetism in Fe-Doped In₂O₃-Diluted Magnetic Semiconductors. ACS Applied Materials and Interfaces, 10(26), 22372-22380. https://doi.org/10.1021/acsami.8b04046

@article{41c648e79b9542dbafff54b4585fc7d0,

title = "Intrinsic or Interface Clustering-Induced Ferromagnetism in Fe-Doped In2O3-Diluted Magnetic Semiconductors",

abstract = "Five percent Fe-doped In2O3 films were deposited using a pulsed laser deposition system. X-ray diffraction and transmission electron microscopy analysis show that the films deposited under oxygen partial pressures of 10-3 and 10-5 Torr are uniform without clusters or secondary phases. However, the film deposited under 10-7 Torr has a Fe-rich phase at the interface. Magnetic measurements demonstrate that the magnetization of the films increases with decreasing oxygen partial pressure. Muon spin relaxation (μSR) analysis indicates that the volume fractions of the ferromagnetic phases in PO2 = 10-3, 10-5, and 10-7 Torr-deposited samples are 23, 49, and 68%, respectively, suggesting that clusters or secondary phases may not be the origin of the ferromagnetism and that the ferromagnetism is not carrier-mediated. We propose that the formation of magnetic bound polarons is the origin of the ferromagnetism. In addition, both μSR and polarized neutron scattering demonstrate that the Fe-rich phase at the interface has a lower magnetization compared to the uniformly distributed phases.",

keywords = "InO, and muon spin relaxation, clustering, diluted magnetic semiconductor, ferromagnetism, intrinsic ferromagnetism",

author = "Xi Luo and Tseng, {Li Ting} and Yiren Wang and Nina Bao and Zunming Lu and Xiang Ding and Rongkun Zheng and Yonghua Du and Kevin Huang and Lei Shu and Andreas Suter and Lee, {Wai Tung} and Rong Liu and Jun Ding and Kiyonori Suzuki and Thomas Prokscha and Elvezio Morenzoni and Yi, {Jia Bao}",

year = "2018",

month = jul,

day = "5",

doi = "10.1021/acsami.8b04046",

language = "English",

volume = "10",

pages = "22372--22380",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

number = "26",

}

Luo, X, Tseng, LT, Wang, Y, Bao, N, Lu, Z, Ding, X, Zheng, R, Du, Y, Huang, K, Shu, L, Suter, A, Lee, WT, Liu, R, Ding, J, Suzuki, K, Prokscha, T, Morenzoni, E & Yi, JB 2018, 'Intrinsic or Interface Clustering-Induced Ferromagnetism in Fe-Doped In₂O₃-Diluted Magnetic Semiconductors', ACS Applied Materials and Interfaces, vol. 10, no. 26, pp. 22372-22380. https://doi.org/10.1021/acsami.8b04046

TY - JOUR

T1 - Intrinsic or Interface Clustering-Induced Ferromagnetism in Fe-Doped In2O3-Diluted Magnetic Semiconductors

AU - Luo, Xi

AU - Tseng, Li Ting

AU - Wang, Yiren

AU - Bao, Nina

AU - Lu, Zunming

AU - Ding, Xiang

AU - Zheng, Rongkun

AU - Du, Yonghua

AU - Huang, Kevin

AU - Shu, Lei

AU - Suter, Andreas

AU - Lee, Wai Tung

AU - Liu, Rong

AU - Ding, Jun

AU - Suzuki, Kiyonori

AU - Prokscha, Thomas

AU - Morenzoni, Elvezio

AU - Yi, Jia Bao

PY - 2018/7/5

Y1 - 2018/7/5

N2 - Five percent Fe-doped In2O3 films were deposited using a pulsed laser deposition system. X-ray diffraction and transmission electron microscopy analysis show that the films deposited under oxygen partial pressures of 10-3 and 10-5 Torr are uniform without clusters or secondary phases. However, the film deposited under 10-7 Torr has a Fe-rich phase at the interface. Magnetic measurements demonstrate that the magnetization of the films increases with decreasing oxygen partial pressure. Muon spin relaxation (μSR) analysis indicates that the volume fractions of the ferromagnetic phases in PO2 = 10-3, 10-5, and 10-7 Torr-deposited samples are 23, 49, and 68%, respectively, suggesting that clusters or secondary phases may not be the origin of the ferromagnetism and that the ferromagnetism is not carrier-mediated. We propose that the formation of magnetic bound polarons is the origin of the ferromagnetism. In addition, both μSR and polarized neutron scattering demonstrate that the Fe-rich phase at the interface has a lower magnetization compared to the uniformly distributed phases.

AB - Five percent Fe-doped In2O3 films were deposited using a pulsed laser deposition system. X-ray diffraction and transmission electron microscopy analysis show that the films deposited under oxygen partial pressures of 10-3 and 10-5 Torr are uniform without clusters or secondary phases. However, the film deposited under 10-7 Torr has a Fe-rich phase at the interface. Magnetic measurements demonstrate that the magnetization of the films increases with decreasing oxygen partial pressure. Muon spin relaxation (μSR) analysis indicates that the volume fractions of the ferromagnetic phases in PO2 = 10-3, 10-5, and 10-7 Torr-deposited samples are 23, 49, and 68%, respectively, suggesting that clusters or secondary phases may not be the origin of the ferromagnetism and that the ferromagnetism is not carrier-mediated. We propose that the formation of magnetic bound polarons is the origin of the ferromagnetism. In addition, both μSR and polarized neutron scattering demonstrate that the Fe-rich phase at the interface has a lower magnetization compared to the uniformly distributed phases.

KW - InO

KW - and muon spin relaxation

KW - clustering

KW - diluted magnetic semiconductor

KW - ferromagnetism

KW - intrinsic ferromagnetism

UR - http://www.scopus.com/inward/record.url?scp=85048490949&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b04046

DO - 10.1021/acsami.8b04046

M3 - Article

C2 - 29893112

AN - SCOPUS:85048490949

SN - 1944-8244

VL - 10

SP - 22372

EP - 22380

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 26

ER -