Interband contributions to nonlinear transport in semiconductor nanostructures

Spin-orbit interaction (SOI) is a crucial ingredient for many potential applications of quantum devices, such as the use of semiconductor nanostructures for quantum computing. It is known that nonlinear conductivities are sensitive to the strength and type of SOI, however, many calculations of nonlinear transport coefficients are based on the semiclassical Boltzmann theory and make simplifying assumptions about scattering effects due to disorder. In this paper, we develop and employ a microscopic theory based on the Keldysh formalism that goes beyond simple semiclassical approximations. This approach, for instance, naturally takes into account the effects of interband transitions, Berry curvature, and allows for a more precise treatment of impurity scattering.