Insulator to metal transition in VO2 M1+B phase on silicon substrate

S. R. Sahu; S. S. Majid; K. Gautam; R. J. Choudhary; V. G. Sathe; D. K. Shukla

doi:10.1063/1.5130313

Insulator to metal transition in VO₂ M1+B phase on silicon substrate

S. R. Sahu^*
, S. S. Majid
, K. Gautam
, R. J. Choudhary
, V. G. Sathe
, D. K. Shukla

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Here we report on X-ray diffraction (XRD), temperature dependent resistivity and Raman measurements of pulsed laser deposition (PLD) grown thin films on Si substrate. XRD confirms coexistence of two, the VO₂ M1 and the VO₂ B, monoclinic phases at room temperature. Resistivity measurement exhibits a transition from low temperature insulating phase to high temperature metallic phase, indicating major contribution of the VO₂ M1 phase. Insulator to metal transition (IMT) is found to occur at ∼328 K which is ∼12 K lower compared to bulk VO_2. Raman measurements confirm the first order structural phase transition, from low temperature monoclinic to high temperature rutile, concomitant with the IMT. Lowering of the transition temperature in our thin film compared to bulk VO₂ is due to strain in the thin film.

Original language	English
Title of host publication	Proceedings of the International Conference on Advanced Materials, ICAM 2019
Editors	Kishor Kumar Sadasivuni, Joji Kurian, Sudheesh Vilasini Damodaran, Joshy Joseph, Deepu Joseph, Emmanuel Tom, Deepu Thomas
Publisher	American Institute of Physics Inc.
ISBN (Electronic)	9780735419070
DOIs	https://doi.org/10.1063/1.5130313
State	Published - 29 Oct 2019
Externally published	Yes
Event	International Conference on Advanced Materials, ICAM 2019 - Kuthuparamba, Kannur, Kerala, India Duration: 12 Jun 2019 → 14 Jun 2019

Publication series

Name	AIP Conference Proceedings
Volume	2162
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	International Conference on Advanced Materials, ICAM 2019
Country/Territory	India
City	Kuthuparamba, Kannur, Kerala
Period	12/06/19 → 14/06/19

Bibliographical note

Publisher Copyright:
© 2019 Author(s).

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.5130313

Cite this

Sahu, S. R., Majid, S. S., Gautam, K., Choudhary, R. J., Sathe, V. G., & Shukla, D. K. (2019). Insulator to metal transition in VO₂ M1+B phase on silicon substrate. In K. K. Sadasivuni, J. Kurian, S. V. Damodaran, J. Joseph, D. Joseph, E. Tom, & D. Thomas (Eds.), Proceedings of the International Conference on Advanced Materials, ICAM 2019 Article 020103 (AIP Conference Proceedings; Vol. 2162). American Institute of Physics Inc.. https://doi.org/10.1063/1.5130313

Sahu, S. R. ; Majid, S. S. ; Gautam, K. et al. / Insulator to metal transition in VO₂ M1+B phase on silicon substrate. Proceedings of the International Conference on Advanced Materials, ICAM 2019. editor / Kishor Kumar Sadasivuni ; Joji Kurian ; Sudheesh Vilasini Damodaran ; Joshy Joseph ; Deepu Joseph ; Emmanuel Tom ; Deepu Thomas. American Institute of Physics Inc., 2019. (AIP Conference Proceedings).

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title = "Insulator to metal transition in VO2 M1+B phase on silicon substrate",

abstract = "Here we report on X-ray diffraction (XRD), temperature dependent resistivity and Raman measurements of pulsed laser deposition (PLD) grown thin films on Si substrate. XRD confirms coexistence of two, the VO2 M1 and the VO2 B, monoclinic phases at room temperature. Resistivity measurement exhibits a transition from low temperature insulating phase to high temperature metallic phase, indicating major contribution of the VO2 M1 phase. Insulator to metal transition (IMT) is found to occur at ∼328 K which is ∼12 K lower compared to bulk VO2. Raman measurements confirm the first order structural phase transition, from low temperature monoclinic to high temperature rutile, concomitant with the IMT. Lowering of the transition temperature in our thin film compared to bulk VO2 is due to strain in the thin film.",

author = "Sahu, \{S. R.\} and Majid, \{S. S.\} and K. Gautam and Choudhary, \{R. J.\} and Sathe, \{V. G.\} and Shukla, \{D. K.\}",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).; International Conference on Advanced Materials, ICAM 2019 ; Conference date: 12-06-2019 Through 14-06-2019",

year = "2019",

month = oct,

day = "29",

doi = "10.1063/1.5130313",

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series = "AIP Conference Proceedings",

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Sahu, SR, Majid, SS, Gautam, K, Choudhary, RJ, Sathe, VG & Shukla, DK 2019, Insulator to metal transition in VO₂ M1+B phase on silicon substrate. in KK Sadasivuni, J Kurian, SV Damodaran, J Joseph, D Joseph, E Tom & D Thomas (eds), Proceedings of the International Conference on Advanced Materials, ICAM 2019., 020103, AIP Conference Proceedings, vol. 2162, American Institute of Physics Inc., International Conference on Advanced Materials, ICAM 2019, Kuthuparamba, Kannur, Kerala, India, 12/06/19. https://doi.org/10.1063/1.5130313

Insulator to metal transition in VO₂ M1+B phase on silicon substrate. / Sahu, S. R.; Majid, S. S.; Gautam, K. et al.
Proceedings of the International Conference on Advanced Materials, ICAM 2019. ed. / Kishor Kumar Sadasivuni; Joji Kurian; Sudheesh Vilasini Damodaran; Joshy Joseph; Deepu Joseph; Emmanuel Tom; Deepu Thomas. American Institute of Physics Inc., 2019. 020103 (AIP Conference Proceedings; Vol. 2162).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Sahu, S. R.

AU - Majid, S. S.

AU - Gautam, K.

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AU - Sathe, V. G.

AU - Shukla, D. K.

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N2 - Here we report on X-ray diffraction (XRD), temperature dependent resistivity and Raman measurements of pulsed laser deposition (PLD) grown thin films on Si substrate. XRD confirms coexistence of two, the VO2 M1 and the VO2 B, monoclinic phases at room temperature. Resistivity measurement exhibits a transition from low temperature insulating phase to high temperature metallic phase, indicating major contribution of the VO2 M1 phase. Insulator to metal transition (IMT) is found to occur at ∼328 K which is ∼12 K lower compared to bulk VO2. Raman measurements confirm the first order structural phase transition, from low temperature monoclinic to high temperature rutile, concomitant with the IMT. Lowering of the transition temperature in our thin film compared to bulk VO2 is due to strain in the thin film.

AB - Here we report on X-ray diffraction (XRD), temperature dependent resistivity and Raman measurements of pulsed laser deposition (PLD) grown thin films on Si substrate. XRD confirms coexistence of two, the VO2 M1 and the VO2 B, monoclinic phases at room temperature. Resistivity measurement exhibits a transition from low temperature insulating phase to high temperature metallic phase, indicating major contribution of the VO2 M1 phase. Insulator to metal transition (IMT) is found to occur at ∼328 K which is ∼12 K lower compared to bulk VO2. Raman measurements confirm the first order structural phase transition, from low temperature monoclinic to high temperature rutile, concomitant with the IMT. Lowering of the transition temperature in our thin film compared to bulk VO2 is due to strain in the thin film.

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A2 - Sadasivuni, Kishor Kumar

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PB - American Institute of Physics Inc.

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Sahu SR, Majid SS, Gautam K, Choudhary RJ, Sathe VG, Shukla DK. Insulator to metal transition in VO₂ M1+B phase on silicon substrate. In Sadasivuni KK, Kurian J, Damodaran SV, Joseph J, Joseph D, Tom E, Thomas D, editors, Proceedings of the International Conference on Advanced Materials, ICAM 2019. American Institute of Physics Inc. 2019. 020103. (AIP Conference Proceedings). doi: 10.1063/1.5130313