Abstract
CNT field-emitters show a quick response and require a low turn-on field for field emission application in vacuum electronic devices. In the present work, we have grown the CNT emitters on the iron-coated silicon substrate. After the growth, it was post-treated with the dense plasma of Ar gas at different plasma power for enhancing the protrusions to improve the field emission properties. The Eto (turn-on) and Eth (threshold) fields reduced to 1.764 V/μm from 2.342 V/μm and 2.130 V/μm from 3.086 V/μm, and J (emission current density) increased to 10,138 μA/cm2 (from 2261 μA/cm2 @ 12.75 V/μm) after 250 W plasma treatment. The Raman spectra confirmed the increment of imperfection in the nanotube sheet after the plasma process. The temporal emission stability improved in terms of minimum current fluctuation due to the enhancement in the edge effect and minimized the screening field phenomena.
| Original language | English |
|---|---|
| Article number | 109627 |
| Journal | Diamond and Related Materials |
| Volume | 132 |
| DOIs | |
| State | Published - Feb 2023 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2022 Elsevier B.V.
Keywords
- Ar gas plasma
- CNTs field-emitters
- electron field emission and current fluctuation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Chemistry
- Mechanical Engineering
- General Physics and Astronomy
- Materials Chemistry
- Electrical and Electronic Engineering