Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition

M. Baseer Haider; M. F. Al-Kuhaili; S. M.A. Durrani; Imran Bakhtiari

doi:10.1557/opl.2012.1029

Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition

M. Baseer Haider^*, M. F. Al-Kuhaili, S. M.A. Durrani, Imran Bakhtiari

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 °C in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 °C. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

Original language	English
Title of host publication	Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II
Pages	59-64
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.1029
State	Published - 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1432
ISSN (Print)	0272-9172

Bibliographical note

Funding Information:
The refractive index is inversely proportional to the packing density of the films. The refractive index of our GaN films (at 500 nm) was less than the bulk value of 2.40 [22]. This low value of the refractive index indicates that the films had relatively low packing density. Lowering of the packing density is caused by the presence of structural defects in the amorphous films. Summary: We report the growth of GaN films at ambient temperature by pulsed laser deposition and the effect of post-growth annealing in a nitrogen environment on the surface morphology, stoichiometry and optical properties of the films. We have observed that the surface roughness of the annealed films was greatly reduced compared to the as-grown samples. We achieved stoichiometric GaN films for the samples that were annealed at 600 oC. The band gap of the samples that was annealed at 600 oC was 3.49eV, which is very close to the band gap of bulk GaN. Refractive index of our GaN films annealed at 600 oC is very close to the values reported in the literature for amorphous GaN films. In Conclusion, GaN films, grown at ambient temperature, exhibit optimal properties for the samples annealed at 600 oC after the growth. This work was supported by deanship of scientific research at King Fahd University of Petroleum and Minerals through internal research grant IN100040. References: 1) L. Liu and J. H. Edgar, Mater. Sci. Eng. R. 37, 61, 2002 2) S. K. O’Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, J. Mater. Sci.: Mater. Electron. 17, 87 (2006) 3) U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, Proc. IEEE 96, 287, (2008) 4) D. Walker, X. Zhang, A. Saxler, P. Kung, and M. Razeghi, Appl. Phys. Lett. 70, 949 (1997) 5) S. D. Hersee, J. C. Ramer, and K. J. Malloy, MRS Bull. July, Vol. 22, 45 (1997) 6) T. D. Moustakas and R. J. Molnar, J. Appl. Phys. 73, 448 (1993)

Keywords

GaN
Nitride semiconduct ors
Optical constants
PLD
Transmittance spectra
XPS

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2012.1029

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Baseer Haider, M., Al-Kuhaili, M. F., Durrani, S. M. A., & Bakhtiari, I. (2012). Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition. In Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II (pp. 59-64). (Materials Research Society Symposium Proceedings; Vol. 1432). https://doi.org/10.1557/opl.2012.1029

@inproceedings{012c27dad4ee452792d08588b3a144d6,

title = "Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition",

abstract = "Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 °C in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 °C. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.",

keywords = "GaN, Nitride semiconduct ors, Optical constants, PLD, Transmittance spectra, XPS",

author = "{Baseer Haider}, M. and Al-Kuhaili, {M. F.} and Durrani, {S. M.A.} and Imran Bakhtiari",

note = "Funding Information: The refractive index is inversely proportional to the packing density of the films. The refractive index of our GaN films (at 500 nm) was less than the bulk value of 2.40 [22]. This low value of the refractive index indicates that the films had relatively low packing density. Lowering of the packing density is caused by the presence of structural defects in the amorphous films. Summary: We report the growth of GaN films at ambient temperature by pulsed laser deposition and the effect of post-growth annealing in a nitrogen environment on the surface morphology, stoichiometry and optical properties of the films. We have observed that the surface roughness of the annealed films was greatly reduced compared to the as-grown samples. We achieved stoichiometric GaN films for the samples that were annealed at 600 oC. The band gap of the samples that was annealed at 600 oC was 3.49eV, which is very close to the band gap of bulk GaN. Refractive index of our GaN films annealed at 600 oC is very close to the values reported in the literature for amorphous GaN films. In Conclusion, GaN films, grown at ambient temperature, exhibit optimal properties for the samples annealed at 600 oC after the growth. This work was supported by deanship of scientific research at King Fahd University of Petroleum and Minerals through internal research grant IN100040. References: 1) L. Liu and J. H. Edgar, Mater. Sci. Eng. R. 37, 61, 2002 2) S. K. O{\textquoteright}Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, J. Mater. Sci.: Mater. Electron. 17, 87 (2006) 3) U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, Proc. IEEE 96, 287, (2008) 4) D. Walker, X. Zhang, A. Saxler, P. Kung, and M. Razeghi, Appl. Phys. Lett. 70, 949 (1997) 5) S. D. Hersee, J. C. Ramer, and K. J. Malloy, MRS Bull. July, Vol. 22, 45 (1997) 6) T. D. Moustakas and R. J. Molnar, J. Appl. Phys. 73, 448 (1993)",

year = "2012",

doi = "10.1557/opl.2012.1029",

language = "English",

isbn = "9781605114095",

series = "Materials Research Society Symposium Proceedings",

pages = "59--64",

booktitle = "Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II",

}

Baseer Haider, M , Al-Kuhaili, MF, Durrani, SMA & Bakhtiari, I 2012, Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition. in Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II. Materials Research Society Symposium Proceedings, vol. 1432, pp. 59-64. https://doi.org/10.1557/opl.2012.1029

Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition. / Baseer Haider, M.; Al-Kuhaili, M. F.; Durrani, S. M.A. et al.
Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II. 2012. p. 59-64 (Materials Research Society Symposium Proceedings; Vol. 1432).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition

AU - Baseer Haider, M.

AU - Al-Kuhaili, M. F.

AU - Durrani, S. M.A.

AU - Bakhtiari, Imran

N1 - Funding Information: The refractive index is inversely proportional to the packing density of the films. The refractive index of our GaN films (at 500 nm) was less than the bulk value of 2.40 [22]. This low value of the refractive index indicates that the films had relatively low packing density. Lowering of the packing density is caused by the presence of structural defects in the amorphous films. Summary: We report the growth of GaN films at ambient temperature by pulsed laser deposition and the effect of post-growth annealing in a nitrogen environment on the surface morphology, stoichiometry and optical properties of the films. We have observed that the surface roughness of the annealed films was greatly reduced compared to the as-grown samples. We achieved stoichiometric GaN films for the samples that were annealed at 600 oC. The band gap of the samples that was annealed at 600 oC was 3.49eV, which is very close to the band gap of bulk GaN. Refractive index of our GaN films annealed at 600 oC is very close to the values reported in the literature for amorphous GaN films. In Conclusion, GaN films, grown at ambient temperature, exhibit optimal properties for the samples annealed at 600 oC after the growth. This work was supported by deanship of scientific research at King Fahd University of Petroleum and Minerals through internal research grant IN100040. References: 1) L. Liu and J. H. Edgar, Mater. Sci. Eng. R. 37, 61, 2002 2) S. K. O’Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, J. Mater. Sci.: Mater. Electron. 17, 87 (2006) 3) U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, Proc. IEEE 96, 287, (2008) 4) D. Walker, X. Zhang, A. Saxler, P. Kung, and M. Razeghi, Appl. Phys. Lett. 70, 949 (1997) 5) S. D. Hersee, J. C. Ramer, and K. J. Malloy, MRS Bull. July, Vol. 22, 45 (1997) 6) T. D. Moustakas and R. J. Molnar, J. Appl. Phys. 73, 448 (1993)

PY - 2012

Y1 - 2012

N2 - Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 °C in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 °C. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

AB - Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 °C in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 °C. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

KW - GaN

KW - Nitride semiconduct ors

KW - Optical constants

KW - PLD

KW - Transmittance spectra

KW - XPS

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DO - 10.1557/opl.2012.1029

M3 - Conference contribution

AN - SCOPUS:84867278920

SN - 9781605114095

T3 - Materials Research Society Symposium Proceedings

SP - 59

EP - 64

BT - Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II

ER -

Baseer Haider M , Al-Kuhaili MF, Durrani SMA, Bakhtiari I. Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition. In Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II. 2012. p. 59-64. (Materials Research Society Symposium Proceedings). doi: 10.1557/opl.2012.1029

Influence of post growth annealing on the optical properties of gallium nitride films grown by pulsed laser deposition

Abstract

Publication series

Bibliographical note

Keywords

ASJC Scopus subject areas

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