Abstract
Thin films of hafnium oxide were deposited by electron beam evaporation, and were subsequently annealed in hydrogen. X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, photoluminescence, spectrophotometry, and current-voltage measurements were performed to investigate the structural, chemical, optical, and electrical properties of the films. As-deposited films were amorphous and nearly stoichiometric. Annealing led to crystallization of the films, and reduction of stoichiometry. Photoluminescence measurements revealed the presence of oxygen-related defects. Optically, the films were transparent with a wide band gap, and this was not affected by hydrogen annealing. Moreover, the films were suitable as anti-reflection coatings on silicon. The electrical resistivity of the films was significantly reduced as a result of annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 515-523 |
| Number of pages | 9 |
| Journal | Materials Chemistry and Physics |
| Volume | 126 |
| Issue number | 3 |
| DOIs | |
| State | Published - 15 Apr 2011 |
Bibliographical note
Funding Information:The support to this work by the Physics Department of King Fahd University of Petroleum and Minerals is acknowledged. We would also like to thank professor N. Tabet for his assistance with the XPS and AFM measurements.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Chemical properties
- Electrical properties
- Hafnium oxide
- Hydrogen annealing
- Optical properties
- Structural properties
- e-Beam evaporation
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
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