Abstract
This chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash (Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous nature and the potential in energy efficient optical communication. Firstly, the epitaxial growth of InAs/InP Qdash material system and various works on optimization is discussed. Then, device level characterization of InAs/InP Qdash Fabry-Perot lasers with chronological improvement in their performance is underlined, in particular employment of assisting injection and mode locking techniques. The chapter concludes by summarizing various demonstrations of C- and L-band Qdash laser diode as a cohesive light source in wavelength division multiplexed optical communication system, and unified transmitter source for next generation optical access networks.
| Original language | English |
|---|---|
| Title of host publication | Nanoscale Semiconductor Lasers |
| Publisher | Elsevier |
| Pages | 109-138 |
| Number of pages | 30 |
| ISBN (Electronic) | 9780128141625 |
| ISBN (Print) | 9780128141632 |
| DOIs | |
| State | Published - 7 Aug 2019 |
Bibliographical note
Publisher Copyright:© 2019 Elsevier Inc. All rights reserved.
Keywords
- Broadband semiconductor lasers
- Frequency comb source
- InAs/InP quantum-dash lasers
- Inhomogeneous broadening
- Injection-locked lasers
- Mode-locked lasers
- Multiwavelength source
- Passive optical networks
- Tunable laser
- Wavelength division multiplexed optical communications
ASJC Scopus subject areas
- General Biochemistry, Genetics and Molecular Biology
- General Engineering
