InAs/InP quantum-dash lasers

M. Z.M. Khan*, E. A. Alkhazraji, M. T.A. Khan, T. K. Ng, B. S. Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

2 Scopus citations

Abstract

This chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash (Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous nature and the potential in energy efficient optical communication. Firstly, the epitaxial growth of InAs/InP Qdash material system and various works on optimization is discussed. Then, device level characterization of InAs/InP Qdash Fabry-Perot lasers with chronological improvement in their performance is underlined, in particular employment of assisting injection and mode locking techniques. The chapter concludes by summarizing various demonstrations of C- and L-band Qdash laser diode as a cohesive light source in wavelength division multiplexed optical communication system, and unified transmitter source for next generation optical access networks.

Original languageEnglish
Title of host publicationNanoscale Semiconductor Lasers
PublisherElsevier
Pages109-138
Number of pages30
ISBN (Electronic)9780128141625
ISBN (Print)9780128141632
DOIs
StatePublished - 7 Aug 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier Inc. All rights reserved.

Keywords

  • Broadband semiconductor lasers
  • Frequency comb source
  • InAs/InP quantum-dash lasers
  • Inhomogeneous broadening
  • Injection-locked lasers
  • Mode-locked lasers
  • Multiwavelength source
  • Passive optical networks
  • Tunable laser
  • Wavelength division multiplexed optical communications

ASJC Scopus subject areas

  • General Biochemistry, Genetics and Molecular Biology
  • General Engineering

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