I-V characteristic of resonant tunneling junctions

H. Bahlouli

doi:10.1002/1521-396X(200006)179:2<475::AID-PSSA475>3.0.CO;2-5

I-V characteristic of resonant tunneling junctions

H. Bahlouli^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We calculate the I-V characteristic of a tunnel junction containing resonant centers in the barrier distributed over a finite energy band and having an arbitrary location within the barrier. The on-site Coulomb interaction, U, between two electrons of opposite spin causes the I-V characteristic to show some peculiar features when eV≈U. The effect of the variation of the energy bandwidth and position of the impurity levels on I-V characteristics is also investigated.

Original language	English
Pages (from-to)	475-483
Number of pages	9
Journal	Physica Status Solidi (A) Applied Research
Volume	179
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200006)179:2<475::AID-PSSA475>3.0.CO;2-5
State	Published - Jun 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200006)179:2<475::AID-PSSA475>3.0.CO;2-5

Cite this

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abstract = "We calculate the I-V characteristic of a tunnel junction containing resonant centers in the barrier distributed over a finite energy band and having an arbitrary location within the barrier. The on-site Coulomb interaction, U, between two electrons of opposite spin causes the I-V characteristic to show some peculiar features when eV≈U. The effect of the variation of the energy bandwidth and position of the impurity levels on I-V characteristics is also investigated.",

author = "H. Bahlouli",

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N2 - We calculate the I-V characteristic of a tunnel junction containing resonant centers in the barrier distributed over a finite energy band and having an arbitrary location within the barrier. The on-site Coulomb interaction, U, between two electrons of opposite spin causes the I-V characteristic to show some peculiar features when eV≈U. The effect of the variation of the energy bandwidth and position of the impurity levels on I-V characteristics is also investigated.

AB - We calculate the I-V characteristic of a tunnel junction containing resonant centers in the barrier distributed over a finite energy band and having an arbitrary location within the barrier. The on-site Coulomb interaction, U, between two electrons of opposite spin causes the I-V characteristic to show some peculiar features when eV≈U. The effect of the variation of the energy bandwidth and position of the impurity levels on I-V characteristics is also investigated.

UR - https://www.scopus.com/pages/publications/0034204808

U2 - 10.1002/1521-396X(200006)179:2<475::AID-PSSA475>3.0.CO;2-5

DO - 10.1002/1521-396X(200006)179:2<475::AID-PSSA475>3.0.CO;2-5

M3 - Article

AN - SCOPUS:0034204808

SN - 0031-8965

VL - 179

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EP - 483

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -

I-V characteristic of resonant tunneling junctions

Abstract

ASJC Scopus subject areas

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