Hopping transport through amorphous junctions

H. Bahlouli

doi:10.1016/0038-1098(95)00802-0

Hopping transport through amorphous junctions

H. Bahlouli^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We study electron tunneling through thin amorphous material and obtain the relative strength of different hopping channel contributions to tunneling compared to the elastic resonant contribution under high magnetic field. The order of magnitude of these contributions are in good agreement with the recent experimental data on amorphous silicon tunnel junctions.

Original language	English
Pages (from-to)	457-461
Number of pages	5
Journal	Solid State Communications
Volume	98
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(95)00802-0
State	Published - May 1996

Keywords

A. heterojunctions
A. semiconductors
D. tunnelling

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0038-1098(95)00802-0

Cite this

@article{79410c2edd8c47d997b93fab88c9df23,

title = "Hopping transport through amorphous junctions",

abstract = "We study electron tunneling through thin amorphous material and obtain the relative strength of different hopping channel contributions to tunneling compared to the elastic resonant contribution under high magnetic field. The order of magnitude of these contributions are in good agreement with the recent experimental data on amorphous silicon tunnel junctions.",

keywords = "A. heterojunctions, A. semiconductors, D. tunnelling",

author = "H. Bahlouli",

year = "1996",

month = may,

doi = "10.1016/0038-1098(95)00802-0",

language = "English",

volume = "98",

pages = "457--461",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "5",

}

TY - JOUR

T1 - Hopping transport through amorphous junctions

AU - Bahlouli, H.

PY - 1996/5

Y1 - 1996/5

N2 - We study electron tunneling through thin amorphous material and obtain the relative strength of different hopping channel contributions to tunneling compared to the elastic resonant contribution under high magnetic field. The order of magnitude of these contributions are in good agreement with the recent experimental data on amorphous silicon tunnel junctions.

AB - We study electron tunneling through thin amorphous material and obtain the relative strength of different hopping channel contributions to tunneling compared to the elastic resonant contribution under high magnetic field. The order of magnitude of these contributions are in good agreement with the recent experimental data on amorphous silicon tunnel junctions.

KW - A. heterojunctions

KW - A. semiconductors

KW - D. tunnelling

UR - https://www.scopus.com/pages/publications/0030151168

U2 - 10.1016/0038-1098(95)00802-0

DO - 10.1016/0038-1098(95)00802-0

M3 - Article

AN - SCOPUS:0030151168

SN - 0038-1098

VL - 98

SP - 457

EP - 461

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Hopping transport through amorphous junctions

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this