Hopping contribution to tunneling in NIS junction

Hocine Bahlouli

doi:10.1016/0375-9601(94)91286-6

Hopping contribution to tunneling in NIS junction

Hocine Bahlouli^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The hopping contribution to the current-voltage characteristic (I-V) of a NIS amorphous tunnel junction containing two impurity localized states in the barrier region is studied using the kinetic equation approach. It is found that the non-linear behavior of the I-V characteristic depends strongly on temperature.

Original language	English
Pages (from-to)	210-214
Number of pages	5
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	194
Issue number	3
DOIs	https://doi.org/10.1016/0375-9601(94)91286-6
State	Published - 31 Oct 1994

ASJC Scopus subject areas

General Physics and Astronomy

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10.1016/0375-9601(94)91286-6

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title = "Hopping contribution to tunneling in NIS junction",

abstract = "The hopping contribution to the current-voltage characteristic (I-V) of a NIS amorphous tunnel junction containing two impurity localized states in the barrier region is studied using the kinetic equation approach. It is found that the non-linear behavior of the I-V characteristic depends strongly on temperature.",

author = "Hocine Bahlouli",

year = "1994",

month = oct,

day = "31",

doi = "10.1016/0375-9601(94)91286-6",

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journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

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AU - Bahlouli, Hocine

PY - 1994/10/31

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N2 - The hopping contribution to the current-voltage characteristic (I-V) of a NIS amorphous tunnel junction containing two impurity localized states in the barrier region is studied using the kinetic equation approach. It is found that the non-linear behavior of the I-V characteristic depends strongly on temperature.

AB - The hopping contribution to the current-voltage characteristic (I-V) of a NIS amorphous tunnel junction containing two impurity localized states in the barrier region is studied using the kinetic equation approach. It is found that the non-linear behavior of the I-V characteristic depends strongly on temperature.

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U2 - 10.1016/0375-9601(94)91286-6

DO - 10.1016/0375-9601(94)91286-6

M3 - Article

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JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 3

ER -

Hopping contribution to tunneling in NIS junction

Abstract

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