Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Pichaya Pattanasattayavong; Nir Yaacobi-Gross; Kui Zhao; Guy Olivier Ngongang Ndjawa; Jinhua Li; Feng Yan; Brian C. O'Regan; Aram Amassian; Thomas D. Anthopoulos

doi:10.1002/adma.201202758

Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Pichaya Pattanasattayavong
, Nir Yaacobi-Gross
, Kui Zhao
, Guy Olivier Ngongang Ndjawa
, Jinhua Li
, Feng Yan
, Brian C. O'Regan
, Aram Amassian^*
, Thomas D. Anthopoulos

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

209 Scopus citations

Abstract

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm² V^-1 s^-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.

Original language	English
Pages (from-to)	1504-1509
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	10
DOIs	https://doi.org/10.1002/adma.201202758
State	Published - 13 Mar 2013
Externally published	Yes

Keywords

copper thiocyanate
solution processing
transparent transistors
wide-bandgap p-type semiconductors

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201202758

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Pattanasattayavong, P., Yaacobi-Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., O'Regan, B. C., Amassian, A., & Anthopoulos, T. D. (2013). Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature. Advanced Materials, 25(10), 1504-1509. https://doi.org/10.1002/adma.201202758

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title = "Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature",

abstract = "The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.",

keywords = "copper thiocyanate, solution processing, transparent transistors, wide-bandgap p-type semiconductors",

author = "Pichaya Pattanasattayavong and Nir Yaacobi-Gross and Kui Zhao and Ndjawa, \{Guy Olivier Ngongang\} and Jinhua Li and Feng Yan and O'Regan, \{Brian C.\} and Aram Amassian and Anthopoulos, \{Thomas D.\}",

year = "2013",

month = mar,

day = "13",

doi = "10.1002/adma.201202758",

language = "English",

volume = "25",

pages = "1504--1509",

journal = "Advanced Materials",

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}

Pattanasattayavong, P, Yaacobi-Gross, N, Zhao, K, Ndjawa, GON, Li, J, Yan, F, O'Regan, BC, Amassian, A & Anthopoulos, TD 2013, 'Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature', Advanced Materials, vol. 25, no. 10, pp. 1504-1509. https://doi.org/10.1002/adma.201202758

TY - JOUR

T1 - Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

AU - Pattanasattayavong, Pichaya

AU - Yaacobi-Gross, Nir

AU - Zhao, Kui

AU - Ndjawa, Guy Olivier Ngongang

AU - Li, Jinhua

AU - Yan, Feng

AU - O'Regan, Brian C.

AU - Amassian, Aram

AU - Anthopoulos, Thomas D.

PY - 2013/3/13

Y1 - 2013/3/13

N2 - The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.

AB - The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.

KW - copper thiocyanate

KW - solution processing

KW - transparent transistors

KW - wide-bandgap p-type semiconductors

UR - https://www.scopus.com/pages/publications/84874974765

U2 - 10.1002/adma.201202758

DO - 10.1002/adma.201202758

M3 - Article

C2 - 23280854

AN - SCOPUS:84874974765

SN - 0935-9648

VL - 25

SP - 1504

EP - 1509

JO - Advanced Materials

JF - Advanced Materials

IS - 10

ER -

Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Abstract

Keywords

ASJC Scopus subject areas

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