Highly efficient and stable near-infrared photo sensor based on multilayer MoS₂/p-Si integrated with plasmonic gold nanoparticles

The exceptional characteristics of two-dimensional materials make them highly efficient and stable for electronic and optoelectronic applications. These materials exhibit a range of beneficial properties, such as ultrafast carrier dynamics, layer-dependent energy bandgap, tunable optical properties, low power dissipation, high mobility, transparency, flexibility, simple fabrication, and ability to confine electromagnetic energy within extremely small volumes. In this work, infrared light (980 nm) photo sensors are fabricated based on a MoS₂/p-Si substrate utilizing the plasmonic phenomenon of gold nanoparticles (AuNPs) to enrich the optoelectronic properties and to enhance the photoresponse. The infrared light response for (Au NPs MoS₂) comes from the strong interlayer coupling, which narrow the energy gap in the heterojunction area, thus rendering heterostructures to longer wavelength detection ability.