High resolution XPS study of oxide layers grown on Ge substrates

N. Tabet; M. Faiz; N. M. Hamdan; Z. Hussain

doi:10.1016/S0039-6028(02)02354-3

High resolution XPS study of oxide layers grown on Ge substrates

N. Tabet^*, M. Faiz, N. M. Hamdan, Z. Hussain

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

High resolution X-ray photoelectron spectroscopy (XPS) was used to analyze thin layers of germanium oxide grown on germanium substrates under various conditions. The results reveal the presence of high density of electron states located at the oxide/germanium interface that lead to the energy band bending. The surface of native oxide layers and that of thin oxide layer grown under dry oxygen correspond to GeO₂ composition. Under Ar etching, lower oxidation states were revealed. Short in situ heat treatment at T = 673 K under ultrahigh vacuum leads to the removal of the oxide layer. In addition, the analysis of the layer grown at T = 653 K under dry oxygen suggests that carbides form at the oxide/substrate interface.

Original language	English
Pages (from-to)	68-72
Number of pages	5
Journal	Surface Science
Volume	523
Issue number	1-2
DOIs	https://doi.org/10.1016/S0039-6028(02)02354-3
State	Published - 10 Jan 2003

Bibliographical note

Funding Information:
This work was partially supported by the U.S. Department of Energy under contract no. DE-AC03-76SF00098. Faiz and Tabet would like to thank King Fahd University of Petroleum and Minerals for its support.

Keywords

Germanium
Oxidation
Surface electronic phenomena (work function, surface potential, surface states, etc.)
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(02)02354-3

Cite this

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title = "High resolution XPS study of oxide layers grown on Ge substrates",

abstract = "High resolution X-ray photoelectron spectroscopy (XPS) was used to analyze thin layers of germanium oxide grown on germanium substrates under various conditions. The results reveal the presence of high density of electron states located at the oxide/germanium interface that lead to the energy band bending. The surface of native oxide layers and that of thin oxide layer grown under dry oxygen correspond to GeO2 composition. Under Ar etching, lower oxidation states were revealed. Short in situ heat treatment at T = 673 K under ultrahigh vacuum leads to the removal of the oxide layer. In addition, the analysis of the layer grown at T = 653 K under dry oxygen suggests that carbides form at the oxide/substrate interface.",

keywords = "Germanium, Oxidation, Surface electronic phenomena (work function, surface potential, surface states, etc.), X-ray photoelectron spectroscopy",

author = "N. Tabet and M. Faiz and Hamdan, \{N. M.\} and Z. Hussain",

note = "Funding Information: This work was partially supported by the U.S. Department of Energy under contract no. DE-AC03-76SF00098. Faiz and Tabet would like to thank King Fahd University of Petroleum and Minerals for its support.",

year = "2003",

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doi = "10.1016/S0039-6028(02)02354-3",

language = "English",

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journal = "Surface Science",

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TY - JOUR

T1 - High resolution XPS study of oxide layers grown on Ge substrates

AU - Tabet, N.

AU - Faiz, M.

AU - Hamdan, N. M.

AU - Hussain, Z.

N1 - Funding Information: This work was partially supported by the U.S. Department of Energy under contract no. DE-AC03-76SF00098. Faiz and Tabet would like to thank King Fahd University of Petroleum and Minerals for its support.

PY - 2003/1/10

Y1 - 2003/1/10

N2 - High resolution X-ray photoelectron spectroscopy (XPS) was used to analyze thin layers of germanium oxide grown on germanium substrates under various conditions. The results reveal the presence of high density of electron states located at the oxide/germanium interface that lead to the energy band bending. The surface of native oxide layers and that of thin oxide layer grown under dry oxygen correspond to GeO2 composition. Under Ar etching, lower oxidation states were revealed. Short in situ heat treatment at T = 673 K under ultrahigh vacuum leads to the removal of the oxide layer. In addition, the analysis of the layer grown at T = 653 K under dry oxygen suggests that carbides form at the oxide/substrate interface.

AB - High resolution X-ray photoelectron spectroscopy (XPS) was used to analyze thin layers of germanium oxide grown on germanium substrates under various conditions. The results reveal the presence of high density of electron states located at the oxide/germanium interface that lead to the energy band bending. The surface of native oxide layers and that of thin oxide layer grown under dry oxygen correspond to GeO2 composition. Under Ar etching, lower oxidation states were revealed. Short in situ heat treatment at T = 673 K under ultrahigh vacuum leads to the removal of the oxide layer. In addition, the analysis of the layer grown at T = 653 K under dry oxygen suggests that carbides form at the oxide/substrate interface.

KW - Germanium

KW - Oxidation

KW - Surface electronic phenomena (work function, surface potential, surface states, etc.)

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/0037427849

U2 - 10.1016/S0039-6028(02)02354-3

DO - 10.1016/S0039-6028(02)02354-3

M3 - Article

AN - SCOPUS:0037427849

SN - 0039-6028

VL - 523

SP - 68

EP - 72

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

High resolution XPS study of oxide layers grown on Ge substrates

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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