High-power and high-efficiency 1.3-μm superluminescent diode with flat-top and ultrawide emission bandwidth

M. Z.M. Khan; H. H. Alhashim; T. K. Ng; B. S. Ooi

doi:10.1109/JPHOT.2015.2399442

High-power and high-efficiency 1.3-μm superluminescent diode with flat-top and ultrawide emission bandwidth

M. Z.M. Khan
, H. H. Alhashim
, T. K. Ng
, B. S. Ooi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.

Original language	English
Article number	7031427
Journal	IEEE Photonics Journal
Volume	7
Issue number	1
DOIs	https://doi.org/10.1109/JPHOT.2015.2399442
State	Published - 1 Feb 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2009-2012 IEEE.

Keywords

Multiple Quantum-wells
high-power
superluminescent diode

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/JPHOT.2015.2399442

Cite this

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title = "High-power and high-efficiency 1.3-μm superluminescent diode with flat-top and ultrawide emission bandwidth",

abstract = "We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14\% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.",

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note = "Publisher Copyright: {\textcopyright} 2009-2012 IEEE.",

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doi = "10.1109/JPHOT.2015.2399442",

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AU - Khan, M. Z.M.

AU - Alhashim, H. H.

AU - Ng, T. K.

AU - Ooi, B. S.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.

AB - We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.

KW - Multiple Quantum-wells

KW - high-power

KW - superluminescent diode

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DO - 10.1109/JPHOT.2015.2399442

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ER -

High-power and high-efficiency 1.3-μm superluminescent diode with flat-top and ultrawide emission bandwidth

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this