@inproceedings{00fa77eb15ea4db9ba29ce96c00c4ffa,
title = "High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region",
abstract = "The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, <0.3dB ripple, and >80 nm 3dB bandwidth at ∼1.55 μm.",
author = "Khan, {M. Z.M.} and Majid, {M. A.} and Ng, {T. K.} and Ooi, {B. S.}",
year = "2013",
doi = "10.1109/IPCon.2013.6656386",
language = "English",
isbn = "9781457715075",
series = "2013 IEEE Photonics Conference, IPC 2013",
pages = "95--96",
booktitle = "2013 IEEE Photonics Conference, IPC 2013",
}