High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly

Stephen A. McGill; Saleem G. Rao; Pradeep Manandhar; Peng Xiong; Seunghun Hong

doi:10.1063/1.2364461

High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly

Stephen A. McGill^*
, Saleem G. Rao
, Pradeep Manandhar
, Peng Xiong
, Seunghun Hong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

High-performance, single-wall carbon nanotube field-effect transistors (SWCNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition. Furthermore, the integration of hydrophobic self-assembled monolayers in the device structure eliminates the primary source of gating hysteresis in SWCNT-FETs; this leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.

Original language	English
Article number	163123
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2364461
State	Published - 2006
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by NSF NIRT ECS-0210332 and FSURF PEG. One of the authors (S.H.) acknowledges the financial support from the KOSEF through NRL and partial support from MOCIE.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{c01c99671d4b4357abe0648a0cb435b1,

title = "High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly",

abstract = "High-performance, single-wall carbon nanotube field-effect transistors (SWCNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition. Furthermore, the integration of hydrophobic self-assembled monolayers in the device structure eliminates the primary source of gating hysteresis in SWCNT-FETs; this leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.",

author = "McGill, \{Stephen A.\} and Rao, \{Saleem G.\} and Pradeep Manandhar and Peng Xiong and Seunghun Hong",

note = "Funding Information: This work was supported by NSF NIRT ECS-0210332 and FSURF PEG. One of the authors (S.H.) acknowledges the financial support from the KOSEF through NRL and partial support from MOCIE.",

year = "2006",

doi = "10.1063/1.2364461",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly

AU - McGill, Stephen A.

AU - Rao, Saleem G.

AU - Manandhar, Pradeep

AU - Xiong, Peng

AU - Hong, Seunghun

N1 - Funding Information: This work was supported by NSF NIRT ECS-0210332 and FSURF PEG. One of the authors (S.H.) acknowledges the financial support from the KOSEF through NRL and partial support from MOCIE.

PY - 2006

Y1 - 2006

N2 - High-performance, single-wall carbon nanotube field-effect transistors (SWCNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition. Furthermore, the integration of hydrophobic self-assembled monolayers in the device structure eliminates the primary source of gating hysteresis in SWCNT-FETs; this leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.

AB - High-performance, single-wall carbon nanotube field-effect transistors (SWCNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition. Furthermore, the integration of hydrophobic self-assembled monolayers in the device structure eliminates the primary source of gating hysteresis in SWCNT-FETs; this leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.

UR - https://www.scopus.com/pages/publications/33750178791

U2 - 10.1063/1.2364461

DO - 10.1063/1.2364461

M3 - Article

AN - SCOPUS:33750178791

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163123

ER -

High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly

Abstract

Bibliographical note

ASJC Scopus subject areas

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