High luminous efficacy green light-emitting diodes with AlGaN cap layer

Abdullah I. Alhassan; Robert M. Farrell; Burhan Saifaddin; Asad Mughal; Feng Wu; Steven P. DenBaars; Shuji Nakamura; James S. Speck

doi:10.1364/OE.24.017868

High luminous efficacy green light-emitting diodes with AlGaN cap layer

Abdullah I. Alhassan, Robert M. Farrell, Burhan Saifaddin, Asad Mughal, Feng Wu, Steven P. DenBaars, Shuji Nakamura, James S. Speck

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

We demonstrate very high luminous efficacy green light-emitting diodes employing Al_0.30Ga_0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm²) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

Original language	English
Pages (from-to)	17868-17873
Number of pages	6
Journal	Optics Express
Volume	24
Issue number	16
DOIs	https://doi.org/10.1364/OE.24.017868
State	Published - 8 Aug 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
©2016 Optical Society of America.

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.24.017868

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@article{098afaf467124cbf854d23dbe28eb99e,

title = "High luminous efficacy green light-emitting diodes with AlGaN cap layer",

abstract = "We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3\% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2\%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.",

author = "Alhassan, \{Abdullah I.\} and Farrell, \{Robert M.\} and Burhan Saifaddin and Asad Mughal and Feng Wu and DenBaars, \{Steven P.\} and Shuji Nakamura and Speck, \{James S.\}",

note = "Publisher Copyright: {\textcopyright}2016 Optical Society of America.",

year = "2016",

month = aug,

day = "8",

doi = "10.1364/OE.24.017868",

language = "English",

volume = "24",

pages = "17868--17873",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group (formerly OSA)",

number = "16",

}

TY - JOUR

T1 - High luminous efficacy green light-emitting diodes with AlGaN cap layer

AU - Alhassan, Abdullah I.

AU - Farrell, Robert M.

AU - Saifaddin, Burhan

AU - Mughal, Asad

AU - Wu, Feng

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

AU - Speck, James S.

PY - 2016/8/8

Y1 - 2016/8/8

N2 - We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

AB - We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

UR - https://www.scopus.com/pages/publications/84987624249

U2 - 10.1364/OE.24.017868

DO - 10.1364/OE.24.017868

M3 - Article

AN - SCOPUS:84987624249

SN - 1094-4087

VL - 24

SP - 17868

EP - 17873

JO - Optics Express

JF - Optics Express

IS - 16

ER -

High luminous efficacy green light-emitting diodes with AlGaN cap layer

Abstract

Bibliographical note

ASJC Scopus subject areas

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