Abstract
Memories are among the most dense integrated circuits fabricated, and so, have the highest rate of defects. This paper proposes a scheme for selecting the right redundancy in memory designs driven by the fabrication cost and the yield. It also proposes a new memory architecture that fills the gap between the existing all-or-none extremes with memories. Experiments show that the new scheme reduces cost by up to 70%.
| Original language | English |
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| Title of host publication | Proceedings - 20th Anniversary IEEE International SOC Conference |
| Pages | 119-122 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 2007 |
Publication series
| Name | Proceedings - 20th Anniversary IEEE International SOC Conference |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering