High-coercivity Co-ferrite thin films on SiO2 (100) substrate prepared by sputtering and PLD

J. H. Yin, J. Ding*, B. H. Liu, Y. C. Wang, Y. B. Yi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Co-ferrite thin films are interesting for magnetic recording and magneto-optical devices. In this work, we have prepared Co-ferrite thin films on SiO2 substrate with high coercivity by sputtering and PLD. The film thickness was around 50 nm. All the films were subsequently annealed at a temperature of 500 to 1000°C. As shown in Fig. 1, as-sputtered Co-ferrite film possessed an amorphous-like structure, as no x-ray diffraction peak was observed. Crystallization required an annealing at 500°C or higher. High coercivity was obtained after annealing at 900-1000°C, as shown in Fig. 2. High coercivity was associated with a nanostructure, as shown in Fig. 3. Hysteresis loops of the sample annealed at 900°C were shown in Fig. 4. It has been found out that substrate also played an important role, as shown in Table 1. Similar trend of magnetic properties was observed in PLD-derived samples.

Original languageEnglish
Title of host publicationINTERMAG ASIA 2005
Subtitle of host publicationDigests of the IEEE International Magnetics Conference
Pages644
Number of pages1
StatePublished - 2005
Externally publishedYes
EventINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference - Nagoya, Japan
Duration: 4 Apr 20058 Apr 2005

Publication series

NameINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

Conference

ConferenceINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference
Country/TerritoryJapan
CityNagoya
Period4/04/058/04/05

ASJC Scopus subject areas

  • General Engineering

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