High-coercivity Co-ferrite thin films on (100)-SiO 2 substrate

Y. C. Wang; J. Ding; J. B. Yi; B. H. Liu; T. Yu; Z. X. Shen

doi:10.1063/1.1695438

High-coercivity Co-ferrite thin films on (100)-SiO ₂ substrate

Y. C. Wang^*
, J. Ding
, J. B. Yi
, B. H. Liu
, T. Yu
, Z. X. Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

150 Scopus citations

Abstract

The deposition of Co-ferrite films on SiO ₂ single-crystal substrates was discussed. These films were prepared by the rf sputtering with a deposition rate of 0.2 Å per second. The preparation of a sputtering target with a stoichiometric composition of CoFe ₂O ₄ by sintering at 1300°C was also demonstrated. These films were annealed in an air atmosphere at a temperature between 500 and 1200°C between 5 and 120 min.

Original language	English
Pages (from-to)	2596-2598
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1695438
State	Published - 5 Apr 2004
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1695438

Cite this

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title = "High-coercivity Co-ferrite thin films on (100)-SiO 2 substrate",

abstract = "The deposition of Co-ferrite films on SiO 2 single-crystal substrates was discussed. These films were prepared by the rf sputtering with a deposition rate of 0.2 {\AA} per second. The preparation of a sputtering target with a stoichiometric composition of CoFe 2O 4 by sintering at 1300°C was also demonstrated. These films were annealed in an air atmosphere at a temperature between 500 and 1200°C between 5 and 120 min.",

author = "Wang, \{Y. C.\} and J. Ding and Yi, \{J. B.\} and Liu, \{B. H.\} and T. Yu and Shen, \{Z. X.\}",

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AU - Ding, J.

AU - Yi, J. B.

AU - Liu, B. H.

AU - Yu, T.

AU - Shen, Z. X.

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The deposition of Co-ferrite films on SiO 2 single-crystal substrates was discussed. These films were prepared by the rf sputtering with a deposition rate of 0.2 Å per second. The preparation of a sputtering target with a stoichiometric composition of CoFe 2O 4 by sintering at 1300°C was also demonstrated. These films were annealed in an air atmosphere at a temperature between 500 and 1200°C between 5 and 120 min.

AB - The deposition of Co-ferrite films on SiO 2 single-crystal substrates was discussed. These films were prepared by the rf sputtering with a deposition rate of 0.2 Å per second. The preparation of a sputtering target with a stoichiometric composition of CoFe 2O 4 by sintering at 1300°C was also demonstrated. These films were annealed in an air atmosphere at a temperature between 500 and 1200°C between 5 and 120 min.

UR - https://www.scopus.com/pages/publications/2342578715

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DO - 10.1063/1.1695438

M3 - Article

AN - SCOPUS:2342578715

SN - 0003-6951

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