High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7

Sang Ok Yoon; Jiho Jeon; Kyung Hwan Choi; Byung Joo Jeong; Sudong Chae; Bum Jun Kim; Seungbae Oh; Chaeheon Woo; Bom Lee; Sooheon Cho; Tae Yeong Kim; Han Eol Jang; Jungyoon Ahn; Xue Dong; Asghar Ghulam; Jae Hyuk Park; Jae Hyun Lee; Hak Ki Yu; Jae Young Choi

doi:10.1021/acsami.1c14335

High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta₂NiSe₇

Sang Ok Yoon, Jiho Jeon, Kyung Hwan Choi, Byung Joo Jeong, Sudong Chae, Bum Jun Kim, Seungbae Oh, Chaeheon Woo, Bom Lee, Sooheon Cho, Tae Yeong Kim, Han Eol Jang, Jungyoon Ahn, Xue Dong, Asghar Ghulam, Jae Hyuk Park, Jae Hyun Lee, Hak Ki Yu^*, Jae Young Choi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.

Original language	English
Pages (from-to)	52871-52879
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	13
Issue number	44
DOIs	https://doi.org/10.1021/acsami.1c14335
State	Published - 10 Nov 2021
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2021 American Chemical Society.

Keywords

TaNiSe
current-carrying materials
high breakdown materials
low-dimensional materials
ternary chalcogenide

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.1c14335

Cite this

Yoon, S. O., Jeon, J., Choi, K. H., Jeong, B. J., Chae, S., Kim, B. J., Oh, S., Woo, C., Lee, B., Cho, S., Kim, T. Y., Jang, H. E., Ahn, J., Dong, X., Ghulam, A., Park, J. H., Lee, J. H., Yu, H. K., & Choi, J. Y. (2021). High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta₂NiSe₇. ACS Applied Materials and Interfaces, 13(44), 52871-52879. https://doi.org/10.1021/acsami.1c14335

@article{94dce6203fd84e8fa35b73099109dbe9,

title = "High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7",

abstract = "We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.",

keywords = "TaNiSe, current-carrying materials, high breakdown materials, low-dimensional materials, ternary chalcogenide",

author = "Yoon, \{Sang Ok\} and Jiho Jeon and Choi, \{Kyung Hwan\} and Jeong, \{Byung Joo\} and Sudong Chae and Kim, \{Bum Jun\} and Seungbae Oh and Chaeheon Woo and Bom Lee and Sooheon Cho and Kim, \{Tae Yeong\} and Jang, \{Han Eol\} and Jungyoon Ahn and Xue Dong and Asghar Ghulam and Park, \{Jae Hyuk\} and Lee, \{Jae Hyun\} and Yu, \{Hak Ki\} and Choi, \{Jae Young\}",

note = "Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",

year = "2021",

month = nov,

day = "10",

doi = "10.1021/acsami.1c14335",

language = "English",

volume = "13",

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Yoon, SO, Jeon, J, Choi, KH, Jeong, BJ, Chae, S, Kim, BJ, Oh, S, Woo, C, Lee, B, Cho, S, Kim, TY, Jang, HE, Ahn, J, Dong, X, Ghulam, A, Park, JH, Lee, JH, Yu, HK & Choi, JY 2021, 'High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta₂NiSe₇', ACS Applied Materials and Interfaces, vol. 13, no. 44, pp. 52871-52879. https://doi.org/10.1021/acsami.1c14335

TY - JOUR

T1 - High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta2NiSe7

AU - Yoon, Sang Ok

AU - Jeon, Jiho

AU - Choi, Kyung Hwan

AU - Jeong, Byung Joo

AU - Chae, Sudong

AU - Kim, Bum Jun

AU - Oh, Seungbae

AU - Woo, Chaeheon

AU - Lee, Bom

AU - Cho, Sooheon

AU - Kim, Tae Yeong

AU - Jang, Han Eol

AU - Ahn, Jungyoon

AU - Dong, Xue

AU - Ghulam, Asghar

AU - Park, Jae Hyuk

AU - Lee, Jae Hyun

AU - Yu, Hak Ki

AU - Choi, Jae Young

PY - 2021/11/10

Y1 - 2021/11/10

N2 - We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.

AB - We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.

KW - TaNiSe

KW - current-carrying materials

KW - high breakdown materials

KW - low-dimensional materials

KW - ternary chalcogenide

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VL - 13

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