Harmonic and intermodulation generation in GaAs, InP, InGaAs and Si semiconductors

Muhammad Taher Abuelma'atti

doi:10.1016/0038-1101(94)90180-5

Harmonic and intermodulation generation in GaAs, InP, InGaAs and Si semiconductors

Muhammad Taher Abuelma'atti^*

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

Abstract

A Fourier-series model describing the nonlinear drift velocity-field characteristic in GaAs, InP, InGaAs and Si semiconductors is presented. Using this model, closed-form expressions are obtained for the harmonic and intermodulation performance of semiconductors due to the nonlinear drift velocity-field characteristic.

Original language	English
Pages (from-to)	1877-1884
Number of pages	8
Journal	Solid-State Electronics
Volume	37
Issue number	11
DOIs	https://doi.org/10.1016/0038-1101(94)90180-5
State	Published - Nov 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(94)90180-5

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title = "Harmonic and intermodulation generation in GaAs, InP, InGaAs and Si semiconductors",

abstract = "A Fourier-series model describing the nonlinear drift velocity-field characteristic in GaAs, InP, InGaAs and Si semiconductors is presented. Using this model, closed-form expressions are obtained for the harmonic and intermodulation performance of semiconductors due to the nonlinear drift velocity-field characteristic.",

author = "Abuelma'atti, \{Muhammad Taher\}",

year = "1994",

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doi = "10.1016/0038-1101(94)90180-5",

language = "English",

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journal = "Solid-State Electronics",

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T1 - Harmonic and intermodulation generation in GaAs, InP, InGaAs and Si semiconductors

AU - Abuelma'atti, Muhammad Taher

PY - 1994/11

Y1 - 1994/11

N2 - A Fourier-series model describing the nonlinear drift velocity-field characteristic in GaAs, InP, InGaAs and Si semiconductors is presented. Using this model, closed-form expressions are obtained for the harmonic and intermodulation performance of semiconductors due to the nonlinear drift velocity-field characteristic.

AB - A Fourier-series model describing the nonlinear drift velocity-field characteristic in GaAs, InP, InGaAs and Si semiconductors is presented. Using this model, closed-form expressions are obtained for the harmonic and intermodulation performance of semiconductors due to the nonlinear drift velocity-field characteristic.

UR - https://www.scopus.com/pages/publications/0028533056

U2 - 10.1016/0038-1101(94)90180-5

DO - 10.1016/0038-1101(94)90180-5

M3 - Article

AN - SCOPUS:0028533056

SN - 0038-1101

VL - 37

SP - 1877

EP - 1884

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

Harmonic and intermodulation generation in GaAs, InP, InGaAs and Si semiconductors

Abstract

ASJC Scopus subject areas

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