Harmonic and intermodulation distortion in SOI FD transistors

Muhammad Taher Abuelma'atti

doi:10.1016/S0038-1101(02)00453-7

Harmonic and intermodulation distortion in SOI FD transistors

Muhammad Taher Abuelma'atti^*

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A new method is presented for predicting the harmonic and intermodulation performance of a SOI FD MOSFET transistor operating, in its triode regime, as a resistor. The results show that, for the same order, the intermodulation product is dominant. This suggests that the use of intermodulation distortion measurement is more informative and relevant than the use of total-harmonic distortion.

Original language	English
Pages (from-to)	797-800
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1101(02)00453-7
State	Published - May 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(02)00453-7

Cite this

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title = "Harmonic and intermodulation distortion in SOI FD transistors",

abstract = "A new method is presented for predicting the harmonic and intermodulation performance of a SOI FD MOSFET transistor operating, in its triode regime, as a resistor. The results show that, for the same order, the intermodulation product is dominant. This suggests that the use of intermodulation distortion measurement is more informative and relevant than the use of total-harmonic distortion.",

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N2 - A new method is presented for predicting the harmonic and intermodulation performance of a SOI FD MOSFET transistor operating, in its triode regime, as a resistor. The results show that, for the same order, the intermodulation product is dominant. This suggests that the use of intermodulation distortion measurement is more informative and relevant than the use of total-harmonic distortion.

AB - A new method is presented for predicting the harmonic and intermodulation performance of a SOI FD MOSFET transistor operating, in its triode regime, as a resistor. The results show that, for the same order, the intermodulation product is dominant. This suggests that the use of intermodulation distortion measurement is more informative and relevant than the use of total-harmonic distortion.

UR - https://www.scopus.com/pages/publications/0037407895

U2 - 10.1016/S0038-1101(02)00453-7

DO - 10.1016/S0038-1101(02)00453-7

M3 - Article

AN - SCOPUS:0037407895

SN - 0038-1101

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SP - 797

EP - 800

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

Harmonic and intermodulation distortion in SOI FD transistors

Abstract

ASJC Scopus subject areas

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