GROWTH of RF SPUTTERED NiO FILMS on DIFFERENT SUBSTRATES-A COMPARATIVE STUDY

Anas A. Ahmed, Mutharasu Devarajan, Naveed Afzal

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

This work explores the structural, surface and optical properties of NiO films grown on Si, GaAs, PET and glass substrates. The NiO films were deposited on these substrates under same conditions by using radiofrequency (RF) magnetron sputtering of NiO target at 100 °C. The structural study by X-ray diffraction (XRD) showed the existence of (200) and (220) oriented NiO peaks on all the substrates. The preferred orientation of NiO films on Si, GaAs and glass was along (200) plane whereas the film grown on PET was observed to be oriented along (220) plane. The crystallite size of NiO on GaAs was the largest among the other substrates. The RMS surface roughness on PET was higher as compared to the other substrates. The band gap of NiO films grown on glass and PET was estimated from UV-Vis transmittance spectroscopy whereas the UV-Vis reflection spectroscopy was carried out to find out the band gap of NiO grown on GaAs and Si substrates. The band gap of NiO on PET was higher than its band gap obtained on other substrates. The results obtained on properties of NiO films on different substrates were correlated with each other.

Original languageEnglish
Article number1750096
JournalSurface Review and Letters
Volume24
Issue number7
DOIs
StatePublished - 1 Oct 2017
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2017 World Scientific Publishing Company.

Keywords

  • NiO
  • RF sputtering
  • band gap
  • semiconductor
  • structural parameters
  • surface roughness

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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