Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition

J. M. Mao; L. F. Sun; L. X. Qian; Z. W. Pan; B. H. Chang; W. Y. Zhou; G. Wang; S. S. Xie

doi:10.1063/1.121629

Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition

J. M. Mao^*
, L. F. Sun
, L. X. Qian
, Z. W. Pan
, B. H. Chang
, W. Y. Zhou
, G. Wang
, S. S. Xie

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi₂ precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes.

Original language	English
Pages (from-to)	3297-3299
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	25
DOIs	https://doi.org/10.1063/1.121629
State	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.121629

Cite this

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title = "Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition",

abstract = "We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes.",

author = "Mao, \{J. M.\} and Sun, \{L. F.\} and Qian, \{L. X.\} and Pan, \{Z. W.\} and Chang, \{B. H.\} and Zhou, \{W. Y.\} and G. Wang and Xie, \{S. S.\}",

year = "1998",

doi = "10.1063/1.121629",

language = "English",

volume = "72",

pages = "3297--3299",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

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T1 - Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition

AU - Mao, J. M.

AU - Sun, L. F.

AU - Qian, L. X.

AU - Pan, Z. W.

AU - Chang, B. H.

AU - Zhou, W. Y.

AU - Wang, G.

AU - Xie, S. S.

PY - 1998

Y1 - 1998

N2 - We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes.

AB - We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes.

UR - https://www.scopus.com/pages/publications/0001468229

U2 - 10.1063/1.121629

DO - 10.1063/1.121629

M3 - Article

AN - SCOPUS:0001468229

SN - 0003-6951

VL - 72

SP - 3297

EP - 3299

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition

Abstract

ASJC Scopus subject areas

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