Green emission in carbon doped ZnO films

L. T. Tseng; J. B. Yi; X. Y. Zhang; G. Z. Xing; H. M. Fan; T. S. Herng; X. Luo; M. Ionescu; J. Ding; S. Li

doi:10.1063/1.4882172

Green emission in carbon doped ZnO films

L. T. Tseng, J. B. Yi, X. Y. Zhang, G. Z. Xing, H. M. Fan, T. S. Herng, X. Luo, M. Ionescu, J. Ding, S. Li

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60-100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

Original language	English
Article number	067117
Journal	AIP Advances
Volume	4
Issue number	6
DOIs	https://doi.org/10.1063/1.4882172
State	Published - Jun 2014
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Green emission in carbon doped ZnO films",

abstract = "The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60-100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.",

author = "Tseng, {L. T.} and Yi, {J. B.} and Zhang, {X. Y.} and Xing, {G. Z.} and Fan, {H. M.} and Herng, {T. S.} and X. Luo and M. Ionescu and J. Ding and S. Li",

year = "2014",

month = jun,

doi = "10.1063/1.4882172",

language = "English",

volume = "4",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Green emission in carbon doped ZnO films

AU - Tseng, L. T.

AU - Yi, J. B.

AU - Zhang, X. Y.

AU - Xing, G. Z.

AU - Fan, H. M.

AU - Herng, T. S.

AU - Luo, X.

AU - Ionescu, M.

AU - Ding, J.

AU - Li, S.

PY - 2014/6

Y1 - 2014/6

N2 - The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60-100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

AB - The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60-100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

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U2 - 10.1063/1.4882172

DO - 10.1063/1.4882172

M3 - Article

AN - SCOPUS:84902097226

SN - 2158-3226

VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 6

M1 - 067117

ER -

Green emission in carbon doped ZnO films

Abstract

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