Germanium-catalyzed growth of zinc oxide nanowires: A semiconductor catalyst for nanowire synthesis

Zheng Wei Pan; Sheng Dai; Christopher M. Rouleau; Douglas H. Lowndes

doi:10.1002/anie.200460043

Germanium-catalyzed growth of zinc oxide nanowires: A semiconductor catalyst for nanowire synthesis

Zheng Wei Pan^*
, Sheng Dai
, Christopher M. Rouleau
, Douglas H. Lowndes

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

Green fields of nanowires: Germanium, a Group IV semiconductor, can act as an efficient catalyst for high-rate (up to 400 μmh^-1) growth of very long (up to 200 μm), extremely straight, and quasi-aligned arrays of single-crystalline ZnO nanowires (see picture). The diameter of the Ge particles (0.5-4 μm) is about 5-15 times that of the associated nanowires (50-400 nm). The patterned growth of ZnO nanorods was achieved on photolithographically prepared Ge-dot patterns.

Original language	English
Pages (from-to)	274-278
Number of pages	5
Journal	Angewandte Chemie - International Edition
Volume	44
Issue number	2
DOIs	https://doi.org/10.1002/anie.200460043
State	Published - 27 Dec 2004
Externally published	Yes

Keywords

Catalyst
Germanium
Nanostructures
Semiconductors

ASJC Scopus subject areas

Catalysis
General Chemistry

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10.1002/anie.200460043

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title = "Germanium-catalyzed growth of zinc oxide nanowires: A semiconductor catalyst for nanowire synthesis",

abstract = "Green fields of nanowires: Germanium, a Group IV semiconductor, can act as an efficient catalyst for high-rate (up to 400 μmh-1) growth of very long (up to 200 μm), extremely straight, and quasi-aligned arrays of single-crystalline ZnO nanowires (see picture). The diameter of the Ge particles (0.5-4 μm) is about 5-15 times that of the associated nanowires (50-400 nm). The patterned growth of ZnO nanorods was achieved on photolithographically prepared Ge-dot patterns.",

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year = "2004",

month = dec,

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doi = "10.1002/anie.200460043",

language = "English",

volume = "44",

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T1 - Germanium-catalyzed growth of zinc oxide nanowires

T2 - A semiconductor catalyst for nanowire synthesis

AU - Pan, Zheng Wei

AU - Dai, Sheng

AU - Rouleau, Christopher M.

AU - Lowndes, Douglas H.

PY - 2004/12/27

Y1 - 2004/12/27

N2 - Green fields of nanowires: Germanium, a Group IV semiconductor, can act as an efficient catalyst for high-rate (up to 400 μmh-1) growth of very long (up to 200 μm), extremely straight, and quasi-aligned arrays of single-crystalline ZnO nanowires (see picture). The diameter of the Ge particles (0.5-4 μm) is about 5-15 times that of the associated nanowires (50-400 nm). The patterned growth of ZnO nanorods was achieved on photolithographically prepared Ge-dot patterns.

AB - Green fields of nanowires: Germanium, a Group IV semiconductor, can act as an efficient catalyst for high-rate (up to 400 μmh-1) growth of very long (up to 200 μm), extremely straight, and quasi-aligned arrays of single-crystalline ZnO nanowires (see picture). The diameter of the Ge particles (0.5-4 μm) is about 5-15 times that of the associated nanowires (50-400 nm). The patterned growth of ZnO nanorods was achieved on photolithographically prepared Ge-dot patterns.

KW - Catalyst

KW - Germanium

KW - Nanostructures

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/11844252085

U2 - 10.1002/anie.200460043

DO - 10.1002/anie.200460043

M3 - Article

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AN - SCOPUS:11844252085

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JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

IS - 2

ER -

Germanium-catalyzed growth of zinc oxide nanowires: A semiconductor catalyst for nanowire synthesis

Abstract

Keywords

ASJC Scopus subject areas

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