GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation

Mohammed A. Gondal; Xiao F. Chang; Zain H. Yamani; Guo F. Yang; Guang B. Ji

doi:10.1080/02773813.2010.542399

GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation

Mohammed A. Gondal^*, Xiao F. Chang, Zain H. Yamani, Guo F. Yang, Guang B. Ji

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.

Original language	English
Pages (from-to)	415-419
Number of pages	5
Journal	Journal of Environmental Science and Health - Part A Toxic/Hazardous Substances and Environmental Engineering
Volume	46
Issue number	4
DOIs	https://doi.org/10.1080/02773813.2010.542399
State	Published - Mar 2011

Bibliographical note

Funding Information:
This work was finically supported by Center of Excellence in Nanotechnology (CENT), KFUPM through NSTIP program under Project #08-NAN93-4 and Natural Science Foundation of Jiangsu Province of China (No: BK2010497).

Keywords

GaN
Photocatalytic
Pulsed laser
Sulforhodamin B
Thin film
Waste water treatment

ASJC Scopus subject areas

Environmental Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1080/02773813.2010.542399

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Gondal, M. A., Chang, X. F., Yamani, Z. H., Yang, G. F., & Ji, G. B. (2011). GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation. Journal of Environmental Science and Health - Part A Toxic/Hazardous Substances and Environmental Engineering, 46(4), 415-419. https://doi.org/10.1080/02773813.2010.542399

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title = "GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation",

abstract = "Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.",

keywords = "GaN, Photocatalytic, Pulsed laser, Sulforhodamin B, Thin film, Waste water treatment",

author = "Gondal, {Mohammed A.} and Chang, {Xiao F.} and Yamani, {Zain H.} and Yang, {Guo F.} and Ji, {Guang B.}",

note = "Funding Information: This work was finically supported by Center of Excellence in Nanotechnology (CENT), KFUPM through NSTIP program under Project #08-NAN93-4 and Natural Science Foundation of Jiangsu Province of China (No: BK2010497).",

year = "2011",

month = mar,

doi = "10.1080/02773813.2010.542399",

language = "English",

volume = "46",

pages = "415--419",

journal = "Journal of Environmental Science and Health - Part A Toxic/Hazardous Substances and Environmental Engineering",

issn = "1093-4529",

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Gondal, MA, Chang, XF, Yamani, ZH, Yang, GF & Ji, GB 2011, 'GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation', Journal of Environmental Science and Health - Part A Toxic/Hazardous Substances and Environmental Engineering, vol. 46, no. 4, pp. 415-419. https://doi.org/10.1080/02773813.2010.542399

GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation. / Gondal, Mohammed A.; Chang, Xiao F.; Yamani, Zain H. et al.
In: Journal of Environmental Science and Health - Part A Toxic/Hazardous Substances and Environmental Engineering, Vol. 46, No. 4, 03.2011, p. 415-419.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation

AU - Gondal, Mohammed A.

AU - Chang, Xiao F.

AU - Yamani, Zain H.

AU - Yang, Guo F.

AU - Ji, Guang B.

N1 - Funding Information: This work was finically supported by Center of Excellence in Nanotechnology (CENT), KFUPM through NSTIP program under Project #08-NAN93-4 and Natural Science Foundation of Jiangsu Province of China (No: BK2010497).

PY - 2011/3

Y1 - 2011/3

N2 - Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.

AB - Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.

KW - GaN

KW - Photocatalytic

KW - Pulsed laser

KW - Sulforhodamin B

KW - Thin film

KW - Waste water treatment

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M3 - Article

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SN - 1093-4529

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JO - Journal of Environmental Science and Health - Part A Toxic/Hazardous Substances and Environmental Engineering

JF - Journal of Environmental Science and Health - Part A Toxic/Hazardous Substances and Environmental Engineering

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ER -

GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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