Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

Muhammad B. Haider; Costel Constantin; Hamad Al-Brithen; Haiqiang Yang; Eugen Trifan; David Ingram; Arthur R. Smith; C. V. Kelly; Y. Ijiri

doi:10.1063/1.1565511

Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

Muhammad B. Haider, Costel Constantin, Hamad Al-Brithen, Haiqiang Yang, Eugen Trifan, David Ingram, Arthur R. Smith^*, C. V. Kelly, Y. Ijiri

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

The effect of Ga/N flux ratio on lattice polarity, surface morphology and manganese incorporation during the radio frequency molecular beam epitaxy of (Ga,Mn)N was discussed. Three regimes of growth, N-rich, metal-rich and Ga-rich were identified and it was found that manganese incorporation occurs only for N-rich and metal-rich conditions. The surface morphology improved significantly even when the growth was only slightly metal-rich.

Original language	English
Pages (from-to)	5274-5281
Number of pages	8
Journal	Journal of Applied Physics
Volume	93
Issue number	9
DOIs	https://doi.org/10.1063/1.1565511
State	Published - 1 May 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N",

abstract = "The effect of Ga/N flux ratio on lattice polarity, surface morphology and manganese incorporation during the radio frequency molecular beam epitaxy of (Ga,Mn)N was discussed. Three regimes of growth, N-rich, metal-rich and Ga-rich were identified and it was found that manganese incorporation occurs only for N-rich and metal-rich conditions. The surface morphology improved significantly even when the growth was only slightly metal-rich.",

author = "Haider, \{Muhammad B.\} and Costel Constantin and Hamad Al-Brithen and Haiqiang Yang and Eugen Trifan and David Ingram and Smith, \{Arthur R.\} and Kelly, \{C. V.\} and Y. Ijiri",

year = "2003",

month = may,

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doi = "10.1063/1.1565511",

language = "English",

volume = "93",

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journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

AU - Haider, Muhammad B.

AU - Constantin, Costel

AU - Al-Brithen, Hamad

AU - Yang, Haiqiang

AU - Trifan, Eugen

AU - Ingram, David

AU - Smith, Arthur R.

AU - Kelly, C. V.

AU - Ijiri, Y.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - The effect of Ga/N flux ratio on lattice polarity, surface morphology and manganese incorporation during the radio frequency molecular beam epitaxy of (Ga,Mn)N was discussed. Three regimes of growth, N-rich, metal-rich and Ga-rich were identified and it was found that manganese incorporation occurs only for N-rich and metal-rich conditions. The surface morphology improved significantly even when the growth was only slightly metal-rich.

AB - The effect of Ga/N flux ratio on lattice polarity, surface morphology and manganese incorporation during the radio frequency molecular beam epitaxy of (Ga,Mn)N was discussed. Three regimes of growth, N-rich, metal-rich and Ga-rich were identified and it was found that manganese incorporation occurs only for N-rich and metal-rich conditions. The surface morphology improved significantly even when the growth was only slightly metal-rich.

UR - https://www.scopus.com/pages/publications/0038663067

U2 - 10.1063/1.1565511

DO - 10.1063/1.1565511

M3 - Article

AN - SCOPUS:0038663067

SN - 0021-8979

VL - 93

SP - 5274

EP - 5281

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

Abstract

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