Gallium oxide nanoribbons and nanosheets

Z. R. Dai; Z. W. Pan; Zhong L. Wang

doi:10.1021/jp013228x

Gallium oxide nanoribbons and nanosheets

Z. R. Dai
, Z. W. Pan
, Zhong L. Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

281 Scopus citations

Abstract

Nanoribbons and flat nanosheets of Ga₂O₃ have been synthesized by evaporating GaN at high temperature with the presence of oxygen. The as-synthesized nanoribbons and nanosheets are pure, structurally uniform, single crystalline, and free from dislocations. The nanoribbons and the nanosheets all have monoclinic β-Ga₂O₃ structure. The flat top and bottom surfaces for both nanoribbons and nanosheets are ±(100), the side surfaces are ±(010) and ±(101̄) for nanoribbons and ±(010), ±(101̄) and ±(212̄) for nanosheets. The axis direction of nanoribbon growth is along either [001] or [010].

Original language	English
Pages (from-to)	902-904
Number of pages	3
Journal	Journal of Physical Chemistry B
Volume	106
Issue number	5
DOIs	https://doi.org/10.1021/jp013228x
State	Published - 7 Feb 2002
Externally published	Yes

ASJC Scopus subject areas

Surfaces, Coatings and Films
Physical and Theoretical Chemistry
Materials Chemistry

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title = "Gallium oxide nanoribbons and nanosheets",

abstract = "Nanoribbons and flat nanosheets of Ga2O3 have been synthesized by evaporating GaN at high temperature with the presence of oxygen. The as-synthesized nanoribbons and nanosheets are pure, structurally uniform, single crystalline, and free from dislocations. The nanoribbons and the nanosheets all have monoclinic β-Ga2O3 structure. The flat top and bottom surfaces for both nanoribbons and nanosheets are ±(100), the side surfaces are ±(010) and ±(10{\=1}) for nanoribbons and ±(010), ±(10{\=1}) and ±(21{\=2}) for nanosheets. The axis direction of nanoribbon growth is along either [001] or [010].",

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year = "2002",

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journal = "Journal of Physical Chemistry B",

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T1 - Gallium oxide nanoribbons and nanosheets

AU - Dai, Z. R.

AU - Pan, Z. W.

AU - Wang, Zhong L.

PY - 2002/2/7

Y1 - 2002/2/7

N2 - Nanoribbons and flat nanosheets of Ga2O3 have been synthesized by evaporating GaN at high temperature with the presence of oxygen. The as-synthesized nanoribbons and nanosheets are pure, structurally uniform, single crystalline, and free from dislocations. The nanoribbons and the nanosheets all have monoclinic β-Ga2O3 structure. The flat top and bottom surfaces for both nanoribbons and nanosheets are ±(100), the side surfaces are ±(010) and ±(101̄) for nanoribbons and ±(010), ±(101̄) and ±(212̄) for nanosheets. The axis direction of nanoribbon growth is along either [001] or [010].

AB - Nanoribbons and flat nanosheets of Ga2O3 have been synthesized by evaporating GaN at high temperature with the presence of oxygen. The as-synthesized nanoribbons and nanosheets are pure, structurally uniform, single crystalline, and free from dislocations. The nanoribbons and the nanosheets all have monoclinic β-Ga2O3 structure. The flat top and bottom surfaces for both nanoribbons and nanosheets are ±(100), the side surfaces are ±(010) and ±(101̄) for nanoribbons and ±(010), ±(101̄) and ±(212̄) for nanosheets. The axis direction of nanoribbon growth is along either [001] or [010].

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U2 - 10.1021/jp013228x

DO - 10.1021/jp013228x

M3 - Article

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SN - 1520-6106

VL - 106

SP - 902

EP - 904

JO - Journal of Physical Chemistry B

JF - Journal of Physical Chemistry B

IS - 5

ER -

Gallium oxide nanoribbons and nanosheets

Abstract

ASJC Scopus subject areas

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