Gallium nitride formation in liquid metal sonication

  • Shengxiang Cai
  • , Mohannad Mayyas
  • , Maricruz G. Saborio
  • , Mohammad B. Ghasemian
  • , Jianbo Tang
  • , Torben Daeneke
  • , Jialuo Han
  • , Ali Asghar Esmailpour
  • , Francois Marie Allioux*
  • , Kourosh Kalantar-Zadeh*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

With growing research interest in liquid metals, such as Ga and Ga-based alloys, understanding their behaviours at reduced dimensions is becoming of more fundamental significance, especially for exploiting their properties in a variety of applications. Mechanical sonication is a common technique used for micronising bulk liquid metals into smaller sized particles. One distinct characteristic of Ga and Ga-based liquid metal alloy particles, micronised via sonication, is the formation of native oxygen species such as GaOOH and Ga2O3. However, the nitridation of these particles has not been reported. In this work, we demonstrate a room temperature nitridation process during the micronisation of eutectic Ga-In alloy (EGaIn). Characterisations reveal that the sonication in the N-containing precursors of PVP and N2 results in the formation of GaN within the GaOOH crystallites that separate themselves from the bulk of EGaIn during sonication. As a model example of the applicability of such particles, low-detection-limit biosensing by photoluminescence of the obtained particles is demonstrated. The work shows a room temperature pathway for the creation of GaN that can be further investigated, expanded upon, and implemented for different future applications.

Original languageEnglish
Pages (from-to)16593-16602
Number of pages10
JournalJournal of Materials Chemistry C
Volume8
Issue number46
DOIs
StatePublished - 14 Dec 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry.

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry

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