Frequency dependent phonon transport in two-dimensional silicon and diamond thin films

B. S. Yilbas*, S. Bin Mansoor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Phonon transport in two-dimensional silicon and aluminum films is investigated. The frequency dependent solution of Boltzmann transport equation is obtained numerically to account for the acoustic and optical phonon branches. The influence of film size on equivalent equilibrium temperature distribution in silicon and aluminum films is presented. It is found that increasing film width influences phonon transport in the film; in which case, the difference between the equivalent equilibrium temperature due to silicon and diamond films becomes smaller for wider films than that of the thinner films.

Original languageEnglish
Article number1250104
JournalModern Physics Letters B
Volume26
Issue number17
DOIs
StatePublished - 10 Jul 2012

Bibliographical note

Funding Information:
The authors acknowledge the support of Center of Excellence for Scientific Research Collaboration with MIT and King Fahd University of Petroleum and Minerals. Dhahran, Saudi Arabia for this work.

Keywords

  • Silicon
  • diamond
  • phonon transport
  • thin film

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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