Flip-chip blue LEDs grown on {2021} bulk GaN substrates utilizing photoelectrochemical etching for substrate removal

Benjamin P. Yonkee; Burhan SaifAddin; John T. Leonard; Steven P. DenBaars; Shuji Nakamura

doi:10.7567/APEX.9.056502

Flip-chip blue LEDs grown on {2021} bulk GaN substrates utilizing photoelectrochemical etching for substrate removal

Benjamin P. Yonkee, Burhan SaifAddin, John T. Leonard, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We demonstrate a 440nm emitting flip-chip GaN LED utilizing photoelectrochemical (PEC) etching for substrate removal. The device was flip-chipbonded to a thermally conductive silicon carbide substrate, which allowed for CW operation at current densities up to 200A/cm² with minimal thermal droop. The PEC etch provided a damage-free method of removing substrates and could allow for substrate reuse. The epitaxially defined etch also exposed a highly doped n-contact layer, which contributed to the low operating voltage of 3.74V at 400A/cm² and a peak wall plug efficiency (WPE) of 7%.

Original language	English
Article number	056502
Journal	Applied Physics Express
Volume	9
Issue number	5
DOIs	https://doi.org/10.7567/APEX.9.056502
State	Published - May 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Flip-chip blue LEDs grown on \{2021\} bulk GaN substrates utilizing photoelectrochemical etching for substrate removal",

abstract = "We demonstrate a 440nm emitting flip-chip GaN LED utilizing photoelectrochemical (PEC) etching for substrate removal. The device was flip-chipbonded to a thermally conductive silicon carbide substrate, which allowed for CW operation at current densities up to 200A/cm2 with minimal thermal droop. The PEC etch provided a damage-free method of removing substrates and could allow for substrate reuse. The epitaxially defined etch also exposed a highly doped n-contact layer, which contributed to the low operating voltage of 3.74V at 400A/cm2 and a peak wall plug efficiency (WPE) of 7\%.",

author = "Yonkee, \{Benjamin P.\} and Burhan SaifAddin and Leonard, \{John T.\} and DenBaars, \{Steven P.\} and Shuji Nakamura",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = may,

doi = "10.7567/APEX.9.056502",

language = "English",

volume = "9",

journal = "Applied Physics Express",

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T1 - Flip-chip blue LEDs grown on {2021} bulk GaN substrates utilizing photoelectrochemical etching for substrate removal

AU - Yonkee, Benjamin P.

AU - SaifAddin, Burhan

AU - Leonard, John T.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2016/5

Y1 - 2016/5

N2 - We demonstrate a 440nm emitting flip-chip GaN LED utilizing photoelectrochemical (PEC) etching for substrate removal. The device was flip-chipbonded to a thermally conductive silicon carbide substrate, which allowed for CW operation at current densities up to 200A/cm2 with minimal thermal droop. The PEC etch provided a damage-free method of removing substrates and could allow for substrate reuse. The epitaxially defined etch also exposed a highly doped n-contact layer, which contributed to the low operating voltage of 3.74V at 400A/cm2 and a peak wall plug efficiency (WPE) of 7%.

AB - We demonstrate a 440nm emitting flip-chip GaN LED utilizing photoelectrochemical (PEC) etching for substrate removal. The device was flip-chipbonded to a thermally conductive silicon carbide substrate, which allowed for CW operation at current densities up to 200A/cm2 with minimal thermal droop. The PEC etch provided a damage-free method of removing substrates and could allow for substrate reuse. The epitaxially defined etch also exposed a highly doped n-contact layer, which contributed to the low operating voltage of 3.74V at 400A/cm2 and a peak wall plug efficiency (WPE) of 7%.

UR - https://www.scopus.com/pages/publications/84964949974

U2 - 10.7567/APEX.9.056502

DO - 10.7567/APEX.9.056502

M3 - Article

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SN - 1882-0778

VL - 9

JO - Applied Physics Express

JF - Applied Physics Express

IS - 5

M1 - 056502

ER -

Flip-chip blue LEDs grown on {2021} bulk GaN substrates utilizing photoelectrochemical etching for substrate removal

Abstract

Bibliographical note

ASJC Scopus subject areas

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