Flexible nanoscale high-performance FinFETs

Galo A. Torres Sevilla; Mohamed T. Ghoneim; Hossain Fahad; Jhonathan P. Rojas; Aftab M. Hussain; Muhammad Mustafa Hussain

doi:10.1021/nn5041608

Flexible nanoscale high-performance FinFETs

Galo A. Torres Sevilla, Mohamed T. Ghoneim, Hossain Fahad, Jhonathan P. Rojas, Aftab M. Hussain, Muhammad Mustafa Hussain^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.

Original language	English
Pages (from-to)	9850-9856
Number of pages	7
Journal	ACS Nano
Volume	8
Issue number	10
DOIs	https://doi.org/10.1021/nn5041608
State	Published - 28 Oct 2014
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2014 American Chemical Society.

Keywords

FinFETs
flexible silicon
high-performance flexible electronics

ASJC Scopus subject areas

General Materials Science
General Engineering
General Physics and Astronomy

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10.1021/nn5041608

Cite this

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title = "Flexible nanoscale high-performance FinFETs",

abstract = "With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.",

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AU - Torres Sevilla, Galo A.

AU - Ghoneim, Mohamed T.

AU - Fahad, Hossain

AU - Rojas, Jhonathan P.

AU - Hussain, Aftab M.

AU - Hussain, Muhammad Mustafa

PY - 2014/10/28

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N2 - With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.

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Flexible nanoscale high-performance FinFETs

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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