Abstract
An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.
Original language | English |
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Pages (from-to) | 2794-2799 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 26 |
Issue number | 18 |
DOIs | |
State | Published - 14 May 2014 |
Externally published | Yes |
Keywords
- FinFET
- brain-architecture inspired computation
- flexible
- silicon
- transparent
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering