Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Galo A.Torres Sevilla; Jhonathan P. Rojas; Hossain M. Fahad; Aftab M. Hussain; Rawan Ghanem; Casey E. Smith; Muhammad M. Hussain

doi:10.1002/adma.201305309

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Galo A.Torres Sevilla, Jhonathan P. Rojas, Hossain M. Fahad, Aftab M. Hussain, Rawan Ghanem, Casey E. Smith, Muhammad M. Hussain^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.

Original language	English
Pages (from-to)	2794-2799
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	18
DOIs	https://doi.org/10.1002/adma.201305309
State	Published - 14 May 2014
Externally published	Yes

Keywords

FinFET
brain-architecture inspired computation
flexible
silicon
transparent

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation",

abstract = "An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.",

keywords = "FinFET, brain-architecture inspired computation, flexible, silicon, transparent",

author = "Sevilla, {Galo A.Torres} and Rojas, {Jhonathan P.} and Fahad, {Hossain M.} and Hussain, {Aftab M.} and Rawan Ghanem and Smith, {Casey E.} and Hussain, {Muhammad M.}",

year = "2014",

month = may,

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doi = "10.1002/adma.201305309",

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journal = "Advanced Materials",

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AU - Sevilla, Galo A.Torres

AU - Rojas, Jhonathan P.

AU - Fahad, Hossain M.

AU - Hussain, Aftab M.

AU - Ghanem, Rawan

AU - Smith, Casey E.

AU - Hussain, Muhammad M.

PY - 2014/5/14

Y1 - 2014/5/14

N2 - An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.

AB - An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.

KW - FinFET

KW - brain-architecture inspired computation

KW - flexible

KW - silicon

KW - transparent

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ER -

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Abstract

Keywords

ASJC Scopus subject areas

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