Abstract
We investigate the strain effect on the radiation hardness of hexagonal boron nitride (h-BN) monolayers using density functional theory calculations. Both compressive and tensile strains are studied in elastic domains along the zigzag, armchair, and biaxial directions. We observe a reduction in radiation hardness to form boron and nitrogen monovacancies under all strains. The origin of this effect is the strain-induced reduction of the energy barrier to displace an atom. An implication of our results is the vulnerability of strained nanomaterials to radiation damage.
| Original language | English |
|---|---|
| Pages (from-to) | 695-703 |
| Number of pages | 9 |
| Journal | Nanoscale |
| Volume | 5 |
| Issue number | 2 |
| DOIs | |
| State | Published - 21 Jan 2013 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Materials Science